onsemi_MJE200G
original

onsemi
MJE200G

276-MJE200G
PDF Datasheet
5A, 40V NPN BJT Power Transistor, TO-225, 65MHz
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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
1.8V
Current Rating
5A
Emitter Base Voltage (VEBO)
8V
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MJE200G Description

MJE200G Description

The MJE200G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for robust power amplification and switching applications. With a collector-emitter voltage (VCE) rating of 40V and a collector current (IC) capability of 5A, this transistor is engineered to handle moderate power loads efficiently. Its transition frequency of 65MHz ensures reliable performance in medium-speed switching circuits, while the low collector cutoff current (ICBO) of 100nA minimizes leakage, enhancing energy efficiency. Packaged in a TO-126 through-hole form factor, the MJE200G is suitable for both prototyping and industrial applications, complying with ROHS3 and REACH environmental standards.

MJE200G Features

  • High Current Handling: Supports up to 5A continuous collector current, ideal for power stages.
  • Low Saturation Voltage: 1.8V @ 1A, 5A reduces power dissipation, improving thermal performance.
  • High DC Current Gain (hFE): 45 @ 2A, 1V ensures efficient signal amplification.
  • Wide Operating Range: 40V VCE and 65MHz transition frequency cater to diverse circuit requirements.
  • Robust Construction: TO-126 package offers mechanical durability and ease of heatsinking.
  • Environmental Compliance: ROHS3 and REACH unaffected, suitable for eco-conscious designs.

MJE200G Applications

The MJE200G excels in:

  • Power Amplifiers: Audio and RF stages due to its high current gain and low distortion.
  • Switching Regulators: Efficiently drives inductive loads in DC-DC converters.
  • Motor Control: Handles high-current pulses in H-bridge configurations.
  • Relay/Driver Circuits: Low saturation voltage minimizes heat generation in repetitive switching.
  • Industrial Automation: Reliable performance in harsh environments with wide temperature ranges.

Conclusion of MJE200G

The MJE200G stands out as a versatile, high-reliability NPN transistor for power amplification and switching tasks. Its balanced combination of current handling, low saturation voltage, and thermal efficiency makes it superior to generic BJTs in demanding applications. Whether used in audio systems, motor controllers, or industrial electronics, this transistor delivers consistent performance, backed by onsemi's quality assurance. Its compliance with environmental standards further ensures suitability for modern, sustainable designs.

FAQ

What voltage specification is listed for MJE200G?
The listed voltage-related specification for MJE200G is 40V.
Is MJE200G currently in stock?
What package or case is MJE200G available in?
What is MJE200G?
What operating temperature range does MJE200G support?
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