onsemi_MJE243G
original

onsemi
MJE243G

276-MJE243G
PDF Datasheet
NPN BJT 100V 4A 15W TO-225 Transistor
14 Weeks

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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
600mV
Current Rating
4A
Emitter Base Voltage (VEBO)
7V
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MJE243G Description

The MJE243G is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including audio amplifiers, power supplies, and motor control circuits.

Description:

The MJE243G is a Darlington transistor with a plastic encapsulated package. It features a high current gain and high power dissipation capability, making it suitable for use in high-power applications.

Features:

  • High current gain (hfe) of 5000 minimum
  • Collector-emitter voltage (Vce) of 800V maximum
  • Collector current (Ic) of 5A maximum
  • High power dissipation capability
  • Plastic encapsulated package

Applications:

  • Audio amplifiers
  • Power supplies
  • Motor control circuits
  • Switching regulators
  • Automotive electronics

The MJE243G is a versatile and reliable transistor that can be used in a wide range of applications. Its high current gain and power dissipation capability make it an excellent choice for high-power applications.

FAQ

What voltage specification is listed for MJE243G?
The listed voltage-related specification for MJE243G is 100V.
What package or case is MJE243G available in?
What is MJE243G?
Are there related or alternative parts for MJE243G?
What is the standard lead time for MJE243G?
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