onsemi_MJE5731G
original

onsemi
MJE5731G

276-MJE5731G
PDF Datasheet
PNP BJT, 350V, 1A, 40W, TO-220
12 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
1V
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Show More

MJE5731G Description

MJE5731G Description

The MJE5731G from onsemi is a high-voltage PNP bipolar junction transistor (BJT) designed for robust performance in demanding electronic circuits. With a collector-emitter breakdown voltage (VCE) of 350V and a maximum collector current (IC) of 1A, this transistor is engineered for applications requiring efficient power handling and reliable switching. Packaged in a TO-220 through-hole mount, the MJE5731G offers excellent thermal dissipation, supporting a maximum power rating of 40W. Its low collector cutoff current (1mA max) and DC current gain (hFE) of 30 @ 300mA, 10V ensure stable amplification and switching characteristics.

MJE5731G Features

  • High Voltage Capability: 350V VCE rating for high-voltage circuit designs.
  • High Current Handling: 1A continuous collector current for power applications.
  • Low Saturation Voltage: 1V max @ 200mA base current and 1A collector current, reducing power losses.
  • Robust Thermal Performance: TO-220 package with 40W power dissipation for reliable operation.
  • Wide hFE Range: Ensures consistent gain across operating conditions.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
  • 10MHz Transition Frequency: Suitable for moderate-speed switching applications.

MJE5731G Applications

The MJE5731G is ideal for:

  • Power Supply Circuits: High-voltage regulation and switching in offline power supplies.
  • Motor Control: Driver stages in PNP-based motor control systems.
  • Audio Amplifiers: Output stages in high-voltage audio amplifiers.
  • Industrial Switching: Relay drivers, solenoid controls, and inductive load switching.
  • Lighting Systems: Ballast and LED driver circuits requiring high-voltage PNP transistors.

Conclusion of MJE5731G

The MJE5731G stands out as a high-voltage PNP transistor with a balanced combination of power handling, low saturation loss, and thermal efficiency. Its TO-220 package ensures easy integration into through-hole designs, while its RoHS3 compliance makes it suitable for modern eco-conscious applications. Whether used in power supplies, motor drives, or industrial controls, the MJE5731G delivers reliable performance in high-voltage environments, making it a preferred choice for engineers seeking durability and efficiency.

FAQ

What operating temperature range does MJE5731G support?
MJE5731G has an operating temperature range of 150°C.
Does MJE5731G have quantity-based pricing?
What package or case is MJE5731G available in?
Are there related or alternative parts for MJE5731G?
What is MJE5731G?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ