onsemi_MJE802G
original

onsemi
MJE802G

276-MJE802G
PDF Datasheet
NPN Darlington Power Transistor, 80V, 4A, TO-225

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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
2.5V
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
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MJE802G Description

MJE802G Description

The MJE802G is a high-performance NPN bipolar transistor designed for a wide range of applications. Manufactured by onsemi, this device offers exceptional technical specifications and performance benefits, making it an ideal choice for various electronic circuits. With a maximum collector current of 4 A and a collector-emitter breakdown voltage of 80 V, the MJE802G delivers outstanding performance in demanding applications. Its through-hole mounting type and bulk packaging make it easy to integrate into various designs.

MJE802G Features

  • High Current Capability: The MJE802G can handle a maximum collector current of 4 A, making it suitable for high-power applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 2.5 V at 30 mA and 1.5 A, this device offers low power dissipation and high efficiency.
  • High DC Current Gain: The minimum hFE of 750 at 1.5 A and 3 V ensures reliable operation and consistent performance.
  • Robust Voltage Ratings: The 80 V collector-emitter breakdown voltage allows the MJE802G to operate in high-voltage environments.
  • Moisture Sensitivity Level 1: This indicates that the device is not sensitive to moisture, making it suitable for a wide range of environmental conditions.
  • RoHS Compliance: The MJE802G is compliant with RoHS3 regulations, ensuring environmental responsibility and compliance with industry standards.

MJE802G Applications

The MJE802G is ideal for various applications due to its high current and voltage ratings, low saturation voltage, and high DC current gain. Some specific use cases include:

  1. Power Amplifiers: The high current and voltage ratings make the MJE802G suitable for power amplifiers in audio systems.
  2. Switching Regulators: The low saturation voltage and high efficiency make it an excellent choice for switching regulators in power supply applications.
  3. Motor Control: The MJE802G can be used in motor control circuits due to its high current and voltage ratings.
  4. Industrial Automation: The robust voltage ratings and moisture sensitivity level make it suitable for industrial automation applications.

Conclusion of MJE802G

The MJE802G is a high-performance NPN bipolar transistor that offers exceptional technical specifications and performance benefits. Its high current and voltage ratings, low saturation voltage, and high DC current gain make it an ideal choice for a wide range of applications, including power amplifiers, switching regulators, motor control, and industrial automation. While the MJE802G is now considered obsolete, its unique features and advantages make it a valuable option for existing designs and applications that require its specific performance characteristics.

FAQ

What operating temperature range does MJE802G support?
MJE802G has an operating temperature range of 150°C.
Are there related or alternative parts for MJE802G?
What voltage specification is listed for MJE802G?
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