onsemi

MMBT3904LT3G

The MMBT3904LT3G is a small signal NPN transistor from ON Semiconductor. It is a high performance transistor that is commonly used in a variety of applications.

Description:

The MMBT3904LT3G is an NPN bipolar junction transistor (BJT) that is designed for use in a variety of applications. It is housed in a SOT-23 plastic package, which makes it compact and easy to use in a variety of electronic circuits.

Features:

• Collector-Emitter Voltage (Vce): -40V
• Collector-Base Voltage (Vcb): -80V
• Emitter-Base Voltage (Veb): -6V
• Continuous Collector Current (Ic): -200mA
• Total Device Dissipation: 350mW
• Storage Temperature: -65°C to +150°C

Applications:

The MMBT3904LT3G is a versatile transistor that can be used in a variety of applications, including:

• Amplifier circuits
• Switching circuits
• Digital circuits
• Low power circuits
• Low voltage circuits
  It is a popular choice for use in small signal applications due to its high performance and compact size. It is also a good choice for use in circuits that require a low power transistor with a high collector-emitter voltage rating.
  In summary, the MMBT3904LT3G is a high performance NPN transistor from ON Semiconductor that is suitable for use in a variety of applications. Its small size and high performance make it a popular choice for use in amplifier circuits, switching circuits, digital circuits, low power circuits, and low voltage circuits.