onsemi_MMBTA05LT1G
original

onsemi
MMBTA05LT1G

276-MMBTA05LT1G
PDF Datasheet
NPN BJT Transistor 60V 500mA 100MHz SOT-23
21 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Current Rating
96.1A
Emitter Base Voltage (VEBO)
4V
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MMBTA05LT1G Description

The MMBTA05LT1G is a small signal transistor from ON Semiconductor. It is a NPN bipolar junction transistor (BJT) that is commonly used in a variety of electronic applications.

Description:

The MMBTA05LT1G is a high-performance NPN transistor that is designed for low-power, high-speed switching applications. It features a low collector-emitter saturation voltage (VCE(sat)) and a high current gain (hFE), making it well-suited for use in a wide range of electronic circuits.

Features:

  • NPN bipolar junction transistor (BJT)
  • Low collector-emitter saturation voltage (VCE(sat))
  • High current gain (hFE)
  • Small signal transistor
  • Suitable for low-power, high-speed switching applications

Applications:

The MMBTA05LT1G is commonly used in a variety of electronic applications, including:

  1. Amplification circuits
  2. Switching circuits
  3. Digital circuits
  4. Low-power, high-speed applications
  5. Consumer electronics
  6. Industrial control systems

In addition to these applications, the MMBTA05LT1G can also be used in any circuit where a small signal NPN transistor is required. It is a popular choice for hobbyists and engineers alike due to its high performance and reliability.

FAQ

Are there related or alternative parts for MMBTA05LT1G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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