onsemi_MMDF3N04HDR2G

onsemi
MMDF3N04HDR2G  
FET, MOSFET Arrays

onsemi
MMDF3N04HDR2G
289-MMDF3N04HDR2G
Ersa
onsemi-MMDF3N04HDR2G-datasheets-5982300.pdf
MOSFET 2N-CH 40V 3.4A 8SOIC
In Stock : 4410

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MMDF3N04HDR2G Description

MMDF3N04HDR2G Description

The MMDF3N04HDR2G is a MOSFET (Metal Oxide) device from onsemi, designed for high-performance applications. It features a 2N-channel, 40V drain-to-source voltage, and a continuous drain current of 3.4A at 25°C. With a maximum power rating of 1.39W, this device is suitable for a variety of electronic systems.

MMDF3N04HDR2G Features

  • Logic Level Gate: Ideal for interfacing with logic level signals.
  • Low Input Capacitance (Ciss): 900pF @ 32V, reducing signal delay and power consumption.
  • Low Gate Charge (Qg): 28nC @ 10V, minimizing power dissipation during switching.
  • High Rds On (Max): 80mOhm @ 3.4A, 10V, ensuring low on-resistance and high efficiency.
  • Low Vgs(th) (Max): 3V @ 250µA, enabling easy gate drive and low power operation.
  • Surface Mount Technology: Facilitates integration into compact, high-density designs.
  • Tape & Reel (TR) Packaging: Optimized for automated assembly processes.

MMDF3N04HDR2G Applications

The MMDF3N04HDR2G is well-suited for applications requiring high performance and reliability in electronic systems. Some ideal use cases include:

  • Automotive Electronics: Power windows, seat controls, and lighting systems.
  • Industrial Controls: Motor drivers, power supplies, and sensor interfaces.
  • Telecommunications: Signal processing, power management, and data transmission systems.
  • Consumer Electronics: Audio amplifiers, power management, and portable devices.

Conclusion of MMDF3N04HDR2G

The MMDF3N04HDR2G offers a combination of high performance, low power consumption, and ease of integration, making it an excellent choice for a wide range of electronic applications. Its unique features, such as low input capacitance and gate charge, provide significant advantages over similar models, ensuring efficient operation and long-term reliability. Despite being classified as obsolete, this device remains a valuable option for legacy systems or applications where its specific characteristics are required.

Tech Specifications

Operating Temperature
FET Feature
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
ECCN
Mounting Type
Product Status
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Series
Package / Case
Technology
Power - Max
REACH Status
Mfr
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
Base Product Number
Moisture Sensitivity Level (MSL)

MMDF3N04HDR2G Documents

Download datasheets and manufacturer documentation for MMDF3N04HDR2G

Shopping Guide

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