The MMDF3N04HDR2G is a MOSFET (Metal Oxide) device from onsemi, designed for high-performance applications. It features a 2N-channel, 40V drain-to-source voltage, and a continuous drain current of 3.4A at 25°C. With a maximum power rating of 1.39W, this device is suitable for a variety of electronic systems.
The MMDF3N04HDR2G is well-suited for applications requiring high performance and reliability in electronic systems. Some ideal use cases include:
The MMDF3N04HDR2G offers a combination of high performance, low power consumption, and ease of integration, making it an excellent choice for a wide range of electronic applications. Its unique features, such as low input capacitance and gate charge, provide significant advantages over similar models, ensuring efficient operation and long-term reliability. Despite being classified as obsolete, this device remains a valuable option for legacy systems or applications where its specific characteristics are required.
Download datasheets and manufacturer documentation for MMDF3N04HDR2G