onsemi_NSS35200MR6T1G
original

onsemi
NSS35200MR6T1G

276-NSS35200MR6T1G
PDF Datasheet
PNP BJT, 35V, 2A, 100MHz, Low VCE(sat), TSOP

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

Package/Case
TSOP
Collector Base Voltage (VCBO)
55V
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
-260mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
310mV
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Show More

NSS35200MR6T1G Description

NSS35200MR6T1G Description

The NSS35200MR6T1G is a PNP single bipolar transistor manufactured by onsemi. It is designed for high-frequency applications, featuring a transition frequency of 100 MHz and a maximum collector-emitter breakdown voltage of 35 V. With a maximum collector current (Ic) of 2 A and a power dissipation of 625 mW, this device offers excellent performance in a compact 6-pin TSOP package.

NSS35200MR6T1G Features

  • High-Frequency Performance: The 100 MHz transition frequency makes the NSS35200MR6T1G ideal for high-speed switching and amplification applications.
  • Robust Voltage and Current Ratings: The 35 V collector-emitter breakdown voltage and 2 A collector current provide ample headroom for demanding applications.
  • Efficient Power Dissipation: The 625 mW power rating ensures reliable operation in high-power applications.
  • Compact 6-Pin TSOP Package: The small form factor of the 6-pin TSOP package makes the NSS35200MR6T1G suitable for space-constrained designs.
  • PNP Transistor Type: The PNP configuration offers advantages in certain applications, such as push-pull amplifiers and voltage regulation.
  • Surface Mount Technology: The surface mount packaging enables efficient PCB layout and manufacturing processes.

NSS35200MR6T1G Applications

The NSS35200MR6T1G is well-suited for a variety of high-frequency and high-power applications, including:

  1. Amplifiers: The high transition frequency and power rating make it an excellent choice for audio and RF amplifiers.
  2. Switching Regulators: The high current and voltage ratings are ideal for power switching applications in power supplies and motor control.
  3. Communications Equipment: The high-frequency performance is suitable for use in transmitters and receivers in communication systems.
  4. Automotive Electronics: The NSS35200MR6T1G can be used in various automotive applications, such as engine control units and infotainment systems.

Conclusion of NSS35200MR6T1G

The NSS35200MR6T1G is a high-performance PNP single bipolar transistor that offers a unique combination of high-frequency performance, robust voltage and current ratings, and efficient power dissipation. Its compact 6-pin TSOP package and surface mount technology make it suitable for a wide range of high-speed and high-power applications. While the device is now considered obsolete, it remains a valuable option for legacy systems and applications that require its specific performance characteristics.

FAQ

What package or case is NSS35200MR6T1G available in?
NSS35200MR6T1G is available in the TSOP package / case.
Are there related or alternative parts for NSS35200MR6T1G?
What voltage specification is listed for NSS35200MR6T1G?
What operating temperature range does NSS35200MR6T1G support?
Is NSS35200MR6T1G currently in stock?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ