onsemi_NSS40300DDR2G
original

onsemi
NSS40300DDR2G

277-NSS40300DDR2G
PDF Datasheet
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL
10 Weeks

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Tech Specifications

Package/Case
SOIC
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
135mV
Collector-emitter Voltage-Max
170mV
Emitter Base Voltage (VEBO)
-7V
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
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NSS40300DDR2G Description

NSS40300DDR2G Description

The NSS40300DDR2G from onsemi is a high-performance dual PNP bipolar transistor array designed for precision switching and amplification applications. Packaged in an 8-SOIC surface-mount configuration, it offers a compact footprint while delivering robust performance with a 40V collector-emitter breakdown voltage and 3A maximum collector current. Its low Vce saturation voltage (170mV @ 2A) ensures minimal power loss, making it highly efficient for power management tasks. The device is RoHS3 compliant and REACH unaffected, meeting stringent environmental and regulatory standards.

NSS40300DDR2G Features

  • Dual PNP Configuration: Integrates two matched PNP transistors in a single package, saving board space and simplifying design.
  • High Current Handling: Supports up to 3A continuous collector current, ideal for driving loads in power circuits.
  • Low Saturation Voltage: 170mV @ 2A reduces heat dissipation and improves efficiency.
  • High DC Current Gain (hFE): 180 @ 1A, 2V ensures reliable amplification in signal processing.
  • Wide Operating Frequency: 100MHz transition frequency suits high-speed switching applications.
  • Robust Packaging: Tape & Reel (TR) for automated assembly, with MSL 1 (Unlimited) moisture sensitivity for easy handling.

NSS40300DDR2G Applications

This transistor array excels in:

  • Power Management: DC-DC converters, voltage regulators, and load switches due to its low Vce and high current capability.
  • Motor Control: Driver stages for small motors or solenoids where efficient switching is critical.
  • Audio Amplification: Low-distortion signal amplification in portable audio devices.
  • Industrial Automation: Relay drivers and sensor interfaces requiring high reliability.
  • Automotive Systems: Suitable for non-critical 12V/24V applications, adhering to robust performance standards.

Conclusion of NSS40300DDR2G

The NSS40300DDR2G stands out for its high current capacity, low saturation voltage, and compact dual-PNP integration, making it a versatile choice for modern electronics. Its surface-mount design, compliance with environmental regulations, and broad applicability in power, audio, and industrial systems position it as a superior alternative to discrete transistors. Engineers will appreciate its balance of performance, efficiency, and space-saving benefits in densely populated PCB designs.

FAQ

What voltage specification is listed for NSS40300DDR2G?
The listed voltage-related specification for NSS40300DDR2G is -40V.
What is NSS40300DDR2G?
Is NSS40300DDR2G currently in stock?
What package or case is NSS40300DDR2G available in?
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