onsemi

NSS40300DDR2G  

Bipolar Transistor Arrays

NSS40300DDR2G Description

The NSS40300DDR2G from onsemi is a high-performance dual PNP bipolar transistor array designed for precision switching and amplification applications. Packaged in an 8-SOIC surface-mount configuration, it offers a compact footprint while delivering robust performance with a 40V collector-emitter breakdown voltage and 3A maximum collector current. Its low Vce saturation voltage (170mV @ 2A) ensures minimal power loss, making it highly efficient for power management tasks. The device is RoHS3 compliant and REACH unaffected, meeting stringent environmental and regulatory standards.

NSS40300DDR2G Features

• Dual PNP Configuration: Integrates two matched PNP transistors in a single package, saving board space and simplifying design.
• High Current Handling: Supports up to 3A continuous collector current, ideal for driving loads in power circuits.
• Low Saturation Voltage: 170mV @ 2A reduces heat dissipation and improves efficiency.
• High DC Current Gain (hFE): 180 @ 1A, 2V ensures reliable amplification in signal processing.
• Wide Operating Frequency: 100MHz transition frequency suits high-speed switching applications.
• Robust Packaging: Tape & Reel (TR) for automated assembly, with MSL 1 (Unlimited) moisture sensitivity for easy handling.

NSS40300DDR2G Applications

This transistor array excels in:

• Power Management: DC-DC converters, voltage regulators, and load switches due to its low Vce and high current capability.
• Motor Control: Driver stages for small motors or solenoids where efficient switching is critical.
• Audio Amplification: Low-distortion signal amplification in portable audio devices.
• Industrial Automation: Relay drivers and sensor interfaces requiring high reliability.
• Automotive Systems: Suitable for non-critical 12V/24V applications, adhering to robust performance standards.

Conclusion of NSS40300DDR2G

The NSS40300DDR2G stands out for its high current capacity, low saturation voltage, and compact dual-PNP integration, making it a versatile choice for modern electronics. Its surface-mount design, compliance with environmental regulations, and broad applicability in power, audio, and industrial systems position it as a superior alternative to discrete transistors. Engineers will appreciate its balance of performance, efficiency, and space-saving benefits in densely populated PCB designs.

NSS40300DDR2G Documents

Download datasheets and manufacturer documentation for NSS40300DDR2G

PCN Assembly/Origin :

Assembly Change 06/Jan/2022      

Datasheets :

NSS40300DDR2G      

PCN Packaging :

Mult MSL1 Pkg Chg 20/Dec/2018      

HTML Datasheet :

NSS40300DDR2G      

Environmental Information :

onsemi RoHS       Material Declaration NSS40300DDR2G