onsemi_NST847BDP6T5G
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onsemi
NST847BDP6T5G

277-NST847BDP6T5G
PDF Datasheet
Dual NPN Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL
8 Weeks

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Tech Specifications

Package/Case
SOT-963-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
100MHz
Lead Free
Lead Free
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NST847BDP6T5G Description

NST847BDP6T5G Description

The NST847BDP6T5G is a high-performance, dual NPN bipolar transistor array from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, this device offers excellent performance in demanding applications. The NST847BDP6T5G features a surface mount package, making it ideal for use in compact, high-density designs. This device is compliant with RoHS3 standards, ensuring its suitability for environmentally conscious applications.

NST847BDP6T5G Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • Power - Max: 350mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Dual NPN transistor configuration for increased functionality
    • High-frequency operation up to 100MHz
    • Low saturation voltage for improved efficiency
    • High current gain for reliable switching performance
  • Unique Features and Advantages:

    • Surface mount package for compact designs
    • RoHS3 compliance for environmentally friendly applications
    • Active product status with no known obsolescence issues

NST847BDP6T5G Applications

The NST847BDP6T5G is ideal for a variety of applications in the electronics industry, including:

  • Automotive Electronics:

    • Power window controls
    • Lighting systems
    • Engine control modules
  • Industrial Controls:

    • Motor drivers
    • Sensor interfaces
    • Signal processing circuits
  • Consumer Electronics:

    • Audio amplifiers
    • Power supplies
    • Portable devices

Conclusion of NST847BDP6T5G

The NST847BDP6T5G from onsemi is a versatile, high-performance dual NPN bipolar transistor array that offers excellent technical specifications and performance benefits. Its unique features, such as a surface mount package and RoHS3 compliance, make it an ideal choice for a wide range of applications in the electronics industry. With its active product status and no known obsolescence issues, the NST847BDP6T5G is a reliable and cost-effective solution for demanding applications.

FAQ

What operating temperature range does NST847BDP6T5G support?
NST847BDP6T5G has an operating temperature range of 150°C.
What package or case is NST847BDP6T5G available in?
What is the standard lead time for NST847BDP6T5G?
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