The NST847BDP6T5G is a high-performance, dual NPN bipolar transistor array from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, this device offers excellent performance in demanding applications. The NST847BDP6T5G features a surface mount package, making it ideal for use in compact, high-density designs. This device is compliant with RoHS3 standards, ensuring its suitability for environmentally conscious applications.
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The NST847BDP6T5G is ideal for a variety of applications in the electronics industry, including:
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The NST847BDP6T5G from onsemi is a versatile, high-performance dual NPN bipolar transistor array that offers excellent technical specifications and performance benefits. Its unique features, such as a surface mount package and RoHS3 compliance, make it an ideal choice for a wide range of applications in the electronics industry. With its active product status and no known obsolescence issues, the NST847BDP6T5G is a reliable and cost-effective solution for demanding applications.
Download datasheets and manufacturer documentation for NST847BDP6T5G