onsemi_NTMFS006N08MC

onsemi
NTMFS006N08MC  
Single FETs, MOSFETs

onsemi
NTMFS006N08MC
278-NTMFS006N08MC
Ersa
onsemi-NTMFS006N08MC-datasheets-13410065.pdf
MOSFET N-CH 80V 9.3A/82A 8PQFN
In Stock : 15016

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NTMFS006N08MC Description

NTMFS006N08MC Description

The NTMFS006N08MC is a high-performance N-channel MOSFET from onsemi, designed for applications requiring robust power management and efficient switching. With a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 9.3A at 25°C, this MOSFET offers a balance of high voltage and current handling capabilities. It is housed in an 8-pin PQFN package, making it suitable for surface-mount applications.

NTMFS006N08MC Features

  • Technology: MOSFET (Metal Oxide), leveraging onsemi's advanced manufacturing processes for reliable performance.
  • Input Capacitance (Ciss): 2300 pF @ 40V, minimizing input charging current and improving switching speed.
  • Gate Charge (Qg): 30 nC @ 10V, reducing switching losses and enabling faster gate drive.
  • Rds On (Max): 6mOhm @ 32A, 10V, ensuring low on-state resistance for efficient power transfer.
  • Vgs(th) (Max): 4V @ 250µA, providing a stable and predictable threshold voltage.
  • Drive Voltage: 6V (Max Rds On), 10V (Min Rds On), allowing for flexible gate drive options.
  • Power Dissipation: 1W (Ta), 78W (Tc), enabling operation in a wide range of thermal environments.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in diverse environmental conditions.
  • RoHS Compliance: ROHS3 Compliant, supporting environmentally conscious design and manufacturing practices.

NTMFS006N08MC Applications

The NTMFS006N08MC is ideal for applications where high voltage and current handling are required, combined with efficient power management. Some specific use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the NTMFS006N08MC can handle the high voltage and current demands while maintaining low power losses.
  • Motor Control: For electric vehicles, industrial automation, and robotics, this MOSFET provides the necessary voltage and current ratings for efficient motor control.
  • Renewable Energy Systems: In solar inverters and wind turbine converters, the NTMFS006N08MC can manage the high power demands while ensuring reliable operation under varying environmental conditions.

Conclusion of NTMFS006N08MC

The NTMFS006N08MC from onsemi stands out for its combination of high voltage and current handling capabilities, low on-state resistance, and efficient switching performance. Its advanced features, such as low gate charge and input capacitance, make it an excellent choice for applications requiring fast switching and low power losses. With its RoHS compliance and unlimited moisture sensitivity level, the NTMFS006N08MC is a reliable and environmentally conscious option for a wide range of power management and motor control applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Part Status
Package Width
Base Product Number
Mounting Style
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

NTMFS006N08MC Documents

Download datasheets and manufacturer documentation for NTMFS006N08MC

Ersa NTMFS006N08MC      
Ersa NTMFS006N08MC      
Ersa onsemi RoHS       onsemi REACH      

Shopping Guide

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