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NTMFS5C628NLT1G  

Single FETs, MOSFETs

The NTMFS5C628NLT1G is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for use in a variety of high voltage applications, including motor control, power conversion, and power management.

Description:

The NTMFS5C628NLT1G is an N-channel MOSFET with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 6.8A. It features a low on-state resistance (RDS(on)) of 85 milliohms maximum at a gate-source voltage (VGS) of 10V, which makes it suitable for use in high efficiency power conversion applications.

Features:

• High voltage drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 6.8A
• Low on-state resistance (RDS(on)) of 85 milliohms maximum at VGS of 10V
• High switching speed and low switching losses
• High input impedance and fast transient response
• Suitable for use in high efficiency power conversion applications

Applications:

The NTMFS5C628NLT1G is suitable for use in a variety of high voltage applications, including:

• Motor control
• Power conversion
• Power management
• Industrial control
• Renewable energy systems
• Automotive applications

In summary, the NTMFS5C628NLT1G is a high voltage MOSFET that offers high efficiency and fast switching capabilities, making it an ideal choice for a wide range of high voltage applications.

NTMFS5C628NLT1G Documents

Download datasheets and manufacturer documentation for NTMFS5C628NLT1G

PCN Assembly/Origin :

Wafer Fab Change 17/Oct/2022      

Datasheets :

NTMFS5C628NL      

HTML Datasheet :

NTMFS5C628NL      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration NTMFS5C628NLT1G