onsemi_NTMTSC4D3N15MC

onsemi
NTMTSC4D3N15MC  
Single FETs, MOSFETs

onsemi
NTMTSC4D3N15MC
278-NTMTSC4D3N15MC
Ersa
onsemi-NTMTSC4D3N15MC-datasheets-6159646.pdf
SINGLE N-CHANNEL POWER MOSFET 15
In Stock : 47

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NTMTSC4D3N15MC Description

NTMTSC4D3N15MC Description

The NTMTSC4D3N15MC from onsemi is a high-performance N-channel power MOSFET designed for demanding power management applications. With a 150V drain-to-source voltage (Vdss) and low on-resistance (Rds(on)) of 4.45mΩ @ 95A, 10V, this device delivers exceptional efficiency in power conversion systems. It features a dual-cool™ package with wettable flank for enhanced thermal dissipation and solder joint inspection, making it ideal for automated PCB assembly. The MOSFET supports continuous drain currents (Id) of 22A (Ta) and 174A (Tc), ensuring robust performance in high-current environments. Its low gate charge (Qg) of 79nC @ 10V and fast switching characteristics minimize power losses, making it suitable for high-frequency applications.

NTMTSC4D3N15MC Features

  • Ultra-low Rds(on): 4.45mΩ @ 95A, 10V for reduced conduction losses.
  • High current handling: 174A (Tc) and 22A (Ta) for power-dense designs.
  • Advanced packaging: Dual Cool™ with wettable flank for superior thermal management and assembly reliability.
  • Wide Vgs range: ±20V gate drive compatibility for flexible circuit design.
  • Fast switching: Low Qg (79nC) and Ciss (6514pF @ 75V) for high-frequency operation.
  • Robust construction: RoHS3 compliant, REACH unaffected, and MSL1 (unlimited) for environmental and handling resilience.

NTMTSC4D3N15MC Applications

This MOSFET excels in applications requiring high efficiency, thermal stability, and compact power solutions, including:

  • DC-DC converters in telecom and server power supplies.
  • Motor drives for industrial automation and robotics.
  • Battery management systems (BMS) in electric vehicles and energy storage.
  • Switched-mode power supplies (SMPS) for high-power density designs.
  • Solar inverters and renewable energy systems.

Conclusion of NTMTSC4D3N15MC

The NTMTSC4D3N15MC stands out as a high-efficiency, high-current MOSFET with superior thermal performance, making it a top choice for modern power electronics. Its low Rds(on), fast switching, and advanced packaging provide significant advantages in efficiency and reliability over conventional MOSFETs. Whether for industrial, automotive, or renewable energy applications, this device ensures optimal power handling and thermal dissipation, aligning with the latest industry demands for compact, high-performance solutions.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Package Width
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTMTSC4D3N15MC Documents

Download datasheets and manufacturer documentation for NTMTSC4D3N15MC

Ersa NTMTSC4D3N15MC      
Ersa onsemi RoHS       onsemi REACH      

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