onsemi_NTTFS1D8N02P1E

onsemi
NTTFS1D8N02P1E  
Single FETs, MOSFETs

onsemi
NTTFS1D8N02P1E
278-NTTFS1D8N02P1E
Ersa
onsemi-NTTFS1D8N02P1E-datasheets-1825260.pdf
MOSFET N-CH 25V 20A/152A 8PQFN
In Stock : 13155

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NTTFS1D8N02P1E Description

NTTFS1D8N02P1E Description

The NTTFS1D8N02P1E is a high-performance MOSFET (Metal Oxide) device designed and manufactured by onsemi, a leading semiconductor company. This N-Channel device is offered in an 8-pin PQFN package and is currently in active production, ensuring ongoing availability for new designs. With its robust technical specifications, the NTTFS1D8N02P1E is well-suited for a variety of applications in the electronics industry.

NTTFS1D8N02P1E Features

  • Technology: MOSFET (Metal Oxide) - A technology known for its high input impedance and low noise characteristics.
  • Drain to Source Voltage (Vdss): 25V - Capable of withstanding high voltages, making it suitable for demanding applications.
  • Current - Continuous Drain (Id): 20A at 25°C (Ta) and 152A at Tc - High current capacity for efficient power management.
  • Rds On (Max): 1.3mOhm @ 30A, 10V - Low on-resistance for minimal power loss.
  • Gate Charge (Qg) (Max): 38 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max): 3159 pF @ 13 V - Low capacitance for fast switching speeds.
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On) - Easy to drive with a wide range of gate voltages.
  • Power Dissipation: 800mW (Ta), 48W (Tc) - High power dissipation capabilities for various thermal management scenarios.
  • Mounting Type: Surface Mount - Ideal for space-constrained applications and modern electronics design.
  • REACH Status: REACH Unaffected - Compliant with European chemical regulations.
  • RoHS Status: ROHS3 Compliant - Adheres to environmental standards restricting hazardous substances.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of manufacturing and storage conditions.

NTTFS1D8N02P1E Applications

The NTTFS1D8N02P1E is an ideal choice for applications requiring high efficiency, power management, and robust performance. Some specific use cases include:

  • Power Electronics: In power supplies and converters where high voltage and current ratings are essential.
  • Automotive Electronics: For in-vehicle power management systems that demand reliability and efficiency.
  • Industrial Control Systems: In motor drives and control circuits where high power dissipation and switching speeds are crucial.
  • Telecommunications: For signal processing and power management in base stations and network equipment.

Conclusion of NTTFS1D8N02P1E

The NTTFS1D8N02P1E stands out with its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its compliance with environmental standards and robust performance make it a preferred choice for designers looking for a reliable and efficient solution in power electronics, automotive, industrial, and telecommunications sectors. With onsemi's commitment to quality and ongoing product support, the NTTFS1D8N02P1E is a dependable component for cutting-edge electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

NTTFS1D8N02P1E Documents

Download datasheets and manufacturer documentation for NTTFS1D8N02P1E

Ersa NTTFS1D8N02P1E      
Ersa NTTFS1D8N02P1E      
Ersa onsemi RoHS       onsemi REACH      

Shopping Guide

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