NVH4L080N120SC1 Description
The NVH4L080N120SC1 is a high-performance Silicon Carbide (SiC) Field-Effect Transistor (FET) from onsemi, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 29A at 25°C, this device is ideal for demanding power electronics applications.
NVH4L080N120SC1 Features
- High Voltage and Current Ratings: The NVH4L080N120SC1 boasts a Vdss of 1200V and an Id of 29A, making it suitable for high-power applications.
- Low On-Resistance: With an Rds(on) of just 110mOhm at 20A and 20V, this FET offers low conduction losses, improving efficiency.
- Silicon Carbide Technology: The SiC technology provides faster switching speeds, lower switching losses, and higher temperature operation compared to traditional silicon-based devices.
- Automotive Grade: Graded for automotive applications, ensuring reliability and performance in harsh environments.
- Through-Hole Mounting: The through-hole package allows for easy integration into existing designs, providing flexibility for various applications.
NVH4L080N120SC1 Applications
The NVH4L080N120SC1 is ideal for a variety of high-power applications, including:
- Electric Vehicle (EV) Charging: Its high voltage and current ratings make it suitable for EV charging stations and onboard chargers.
- Renewable Energy: The device's performance benefits are well-suited for solar inverters and wind turbine converters.
- Industrial Power Supplies: Its robustness and high-power capabilities make it an excellent choice for industrial power supplies and motor drives.
Conclusion of NVH4L080N120SC1
The NVH4L080N120SC1 from onsemi stands out due to its high voltage and current ratings, low on-resistance, and Silicon Carbide technology. Its automotive-grade performance and through-hole mounting make it a versatile choice for high-power applications across various industries. With its unique features and advantages, the NVH4L080N120SC1 is a reliable and efficient solution for demanding power electronics applications.