onsemi_NVH4L080N120SC1

onsemi
NVH4L080N120SC1  
Single FETs, MOSFETs

onsemi
NVH4L080N120SC1
278-NVH4L080N120SC1
Ersa
onsemi-NVH4L080N120SC1-datasheets-7766305.pdf
SICFET N-CH 1200V 29A TO247-4
In Stock : 18

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NVH4L080N120SC1 Description

NVH4L080N120SC1 Description

The NVH4L080N120SC1 is a high-performance Silicon Carbide (SiC) Field-Effect Transistor (FET) from onsemi, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 29A at 25°C, this device is ideal for demanding power electronics applications.

NVH4L080N120SC1 Features

  • High Voltage and Current Ratings: The NVH4L080N120SC1 boasts a Vdss of 1200V and an Id of 29A, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds(on) of just 110mOhm at 20A and 20V, this FET offers low conduction losses, improving efficiency.
  • Silicon Carbide Technology: The SiC technology provides faster switching speeds, lower switching losses, and higher temperature operation compared to traditional silicon-based devices.
  • Automotive Grade: Graded for automotive applications, ensuring reliability and performance in harsh environments.
  • Through-Hole Mounting: The through-hole package allows for easy integration into existing designs, providing flexibility for various applications.

NVH4L080N120SC1 Applications

The NVH4L080N120SC1 is ideal for a variety of high-power applications, including:

  • Electric Vehicle (EV) Charging: Its high voltage and current ratings make it suitable for EV charging stations and onboard chargers.
  • Renewable Energy: The device's performance benefits are well-suited for solar inverters and wind turbine converters.
  • Industrial Power Supplies: Its robustness and high-power capabilities make it an excellent choice for industrial power supplies and motor drives.

Conclusion of NVH4L080N120SC1

The NVH4L080N120SC1 from onsemi stands out due to its high voltage and current ratings, low on-resistance, and Silicon Carbide technology. Its automotive-grade performance and through-hole mounting make it a versatile choice for high-power applications across various industries. With its unique features and advantages, the NVH4L080N120SC1 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVH4L080N120SC1 Documents

Download datasheets and manufacturer documentation for NVH4L080N120SC1

Ersa NVH4L080N120SC1      
Ersa Packing quantity increase 25/Jun/2021      
Ersa onsemi RoHS       onsemi REACH      

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