onsemi_NVMFD5C672NLT1G

onsemi
NVMFD5C672NLT1G  
FET, MOSFET Arrays

onsemi
NVMFD5C672NLT1G
289-NVMFD5C672NLT1G
Ersa
onsemi-NVMFD5C672NLT1G-datasheets-13131427.pdf
MOSFET 2N-CH 60V 12A/49A 8DFN
In Stock : 2041

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

NVMFD5C672NLT1G Description

The NVMFD5C672NLT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.

Description:

The NVMFD5C672NLT1G is an N-channel MOSFET with a drain-to-source voltage (VDS) of 60V and a continuous drain current (ID) of 7.2A. It features a low on-state resistance (RDS(on)) of 4.2mΩ, which helps to minimize power dissipation and improve efficiency in power conversion applications.

Features:

  1. Low on-state resistance (RDS(on)) of 4.2mΩ, which minimizes power dissipation and improves efficiency.
  2. High drain-to-source voltage (VDS) of 60V, making it suitable for use in a wide range of power electronics applications.
  3. Continuous drain current (ID) of 7.2A, allowing for high current applications.
  4. High switching speed, which makes it suitable for use in high-frequency applications.
  5. Integrated body diode for efficient bidirectional current flow.
  6. RoHS compliant, making it suitable for use in environmentally friendly applications.

Applications:

  1. Power electronics, such as DC-DC converters, power supplies, and battery chargers.
  2. Motor control applications, including brushless DC motors and stepper motors.
  3. Automotive systems, such as electric power steering and electric vehicle charging systems.
  4. Industrial control systems, including robotics and automation equipment.
  5. Telecommunications equipment, such as power amplifiers and signal conditioning circuits.

Overall, the NVMFD5C672NLT1G is a versatile and high-performance MOSFET that offers excellent efficiency and reliability for a wide range of applications. Its low on-state resistance and high voltage and current ratings make it an ideal choice for power electronics and motor control applications, while its high switching speed and integrated body diode make it suitable for use in high-frequency and bidirectional current applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFD5C672NLT1G Documents

Download datasheets and manufacturer documentation for NVMFD5C672NLT1G

Ersa NVMFD5C672NL      
Ersa NVMFD5C672NL      
Ersa Mult Dev Datasheet Correction 1/May/2019      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFD5C672NLT1G      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service