onsemi_TIP29BG
original

onsemi
TIP29BG

276-TIP29BG
PDF Datasheet
80V 1A NPN BJT Power Transistor TO-220
14 Weeks

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ISO45001
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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
700mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
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TIP29BG Description

TIP29BG Description

The TIP29BG is a high-performance NPN bipolar junction transistor (BJT) from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 1A, this device delivers exceptional performance in demanding power switching and amplification applications. The TIP29BG features a 3MHz transition frequency, making it suitable for high-speed digital circuits. Its 700mV Vce saturation at 125mA and 1A ensures efficient operation in low-voltage applications. The device is packaged in a through-hole TO220 tube package, providing excellent thermal performance and ease of handling.

TIP29BG Features

  • NPN transistor type for high current gain and low noise
  • 80V maximum collector-emitter breakdown voltage for reliable operation in high-voltage circuits
  • 1A maximum collector current for high-power switching and amplification
  • 3MHz transition frequency for high-speed digital circuits
  • 700mV Vce saturation at 125mA and 1A for efficient low-voltage operation
  • Through-hole TO220 tube package for excellent thermal performance and ease of handling
  • 2W maximum power dissipation for handling high-power applications
  • RoHS3 compliant for environmental sustainability
  • REACH unaffected for compliance with European chemical regulations
  • 15 minimum DC current gain (hFE) at 1A, 4V for consistent performance
  • Moisture sensitivity level (MSL) not applicable, ensuring reliable operation in various environments

TIP29BG Applications

The TIP29BG is ideal for a wide range of applications in the electronics industry, including:

  1. Power switching and amplification in high-voltage circuits
  2. High-speed digital circuits requiring fast transition frequencies
  3. Low-voltage applications with efficient Vce saturation
  4. Audio and video amplification circuits
  5. Motor control and drive circuits
  6. Power supply and battery management systems
  7. Industrial control and automation systems

Conclusion of TIP29BG

The TIP29BG from onsemi is a versatile and high-performance NPN bipolar junction transistor, offering exceptional technical specifications and performance benefits. Its unique features, such as high breakdown voltage, high current gain, and efficient Vce saturation, make it an ideal choice for a wide range of applications in the electronics industry. With its RoHS3 compliance and REACH unaffected status, the TIP29BG is a reliable and environmentally friendly solution for demanding power switching and amplification applications.

FAQ

Are there related or alternative parts for TIP29BG?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the standard lead time for TIP29BG?
What package or case is TIP29BG available in?
What voltage specification is listed for TIP29BG?
What operating temperature range does TIP29BG support?
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