

ROHM Semiconductor
R6006ANX
278-R6006ANX
PDF Datasheet
MOSFET N-CH 600V 6A TO220FM
23 Weeks
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Responsible qualityTech Specifications
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Product Status
Not For New Designs
Supplier Device Package
TO-220FM
Drain to Source Voltage (Vdss)
600 V
Power Dissipation-Max
40W (Tc)
Package / Case
TO-220-3 Full Pack
R6006ANX Description
Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the R6006ANX belongs to can be classified under the Discrete Semiconductors. R6006ANX is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. R6006ANX provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.
FAQ
What voltage specification is listed for R6006ANX?
The listed voltage-related specification for R6006ANX is 600 V.
Are there related or alternative parts for R6006ANX?
What is the standard lead time for R6006ANX?
What package or case is R6006ANX available in?
What is the mounting type of R6006ANX?



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