

ROHM Semiconductor
R6035ENZ1C9
278-R6035ENZ1C9
PDF Datasheet
MOSFET N-CH 600V 35A TO247
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Responsible qualityTech Specifications
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-247
Drain to Source Voltage (Vdss)
600 V
Power Dissipation-Max
120W (Tc)
Package / Case
TO-247-3
R6035ENZ1C9 Description
Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the R6035ENZ1C9 belongs to can be classified under the Discrete Semiconductors. R6035ENZ1C9 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. R6035ENZ1C9 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.
FAQ
Are there related or alternative parts for R6035ENZ1C9?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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