The RZR020P01TL is a P-Channel MOSFET manufactured by ROHM Semiconductor, designed for high performance in electronic devices. With a maximum drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 2A at 25°C, this MOSFET is ideal for applications requiring high voltage and current handling capabilities.
RZR020P01TL Features
Technology: MOSFET (Metal Oxide), offering high efficiency and low power loss.
Input Capacitance (Ciss): Maximum of 770 pF @ 6V, ensuring fast switching speeds.
Gate Charge (Qg): Maximum of 6.5 nC @ 4.5V, reducing switching losses.
Rds On (Max): 105mOhm @ 2A, 4.5V, providing low on-resistance for efficient power delivery.
Vgs(th) (Max): 1V @ 1mA, ensuring reliable threshold voltage performance.
Drive Voltage: 1.5V (Max Rds On) to 4.5V (Min Rds On), offering flexibility in gate drive requirements.
Power Dissipation: Maximum of 1W (Ta), suitable for various power management applications.
Operating Temperature: Up to 150°C (TJ), making it suitable for high-temperature environments.
Mounting Type: Surface Mount
REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
RoHS Status: ROHS3 Compliant, adhering to environmental standards.
RZR020P01TL Applications
The RZR020P01TL is ideal for applications where high voltage and current handling are required, such as:
Power Management: In power supply circuits and voltage regulation applications.
Motor Control: For driving and controlling electric motors in industrial and automotive systems.
Audio Amplifiers: In high-fidelity audio amplifiers requiring low distortion and high power output.
Automotive Electronics: For various control and power management functions in vehicles.
Conclusion of RZR020P01TL
The RZR020P01TL from ROHM Semiconductor is a high-performance P-Channel MOSFET, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for applications requiring efficient power management and high reliability. With its compliance with REACH and RoHS regulations, the RZR020P01TL is not only a powerful component but also an environmentally conscious choice for electronic design.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
RZR020P01TL Documents
Download datasheets and manufacturer documentation for RZR020P01TL
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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