STMicroelectronics_STGW80V60DF

STMicroelectronics
STGW80V60DF  
Single IGBTs

STMicroelectronics
STGW80V60DF
279-STGW80V60DF
Ersa
STMicroelectronics-STGW80V60DF-datasheets-6901993.pdf
IGBT 600V 120A 469W TO247
In Stock : 109

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STGW80V60DF Description

STGW80V60DF Description

The STGW80V60DF is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for applications requiring robust power management. With a maximum collector-emitter breakdown voltage of 600V, it is capable of handling a continuous collector current of 120A, making it ideal for high-power electronics. The device features a Trench Field Stop IGBT type, which offers improved switching performance and reduced conduction losses. The STGW80V60DF is packaged in a through-hole TO247 package, suitable for various mounting options.

STGW80V60DF Features

  • Technical Specifications: The STGW80V60DF boasts a reverse recovery time of 60ns, ensuring fast switching capabilities. It has a maximum switching energy of 1.8mJ (on) and 1mJ (off), contributing to its high efficiency. The device also features a low Vce(on) of 2.3V @ 15V, 80A, which minimizes power dissipation and improves thermal management.

  • Performance Benefits: The STGW80V60DF's low gate charge of 448nC enables fast gate control, reducing switching losses and improving overall efficiency. Its low on-state voltage drop and high current handling capability make it suitable for high-power applications, such as motor drives and power supplies.

  • Unique Advantages: Compared to similar models, the STGW80V60DF offers a combination of high power handling, fast switching, and low conduction losses. Its REACH unaffected status and RoHS3 compliance make it an environmentally friendly choice for electronics manufacturers.

STGW80V60DF Applications

The STGW80V60DF is ideal for various high-power applications, including:

  • Industrial Motor Drives: Its high current handling and fast switching capabilities make it suitable for controlling industrial motors in applications such as conveyor systems and machine tools.

  • Power Supplies: The STGW80V60DF's low on-state voltage drop and high efficiency make it an excellent choice for power supply designs, particularly in renewable energy systems and uninterruptible power supplies (UPS).

  • Renewable Energy Systems: The device's high power handling and switching performance make it suitable for solar inverters and wind turbine converters, where high efficiency and reliability are critical.

Conclusion of STGW80V60DF

The STGW80V60DF from STMicroelectronics is a high-performance, single IGBT designed for high-power applications. Its combination of high current handling, fast switching, and low conduction losses make it an ideal choice for industrial motor drives, power supplies, and renewable energy systems. With its REACH unaffected status and RoHS3 compliance, the STGW80V60DF offers a reliable and environmentally friendly solution for electronics manufacturers.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Technology
Continuous Collector Current Ic Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage

STGW80V60DF Documents

Download datasheets and manufacturer documentation for STGW80V60DF

Ersa IGBT/IPM TFS A/T Add 22/Oct/2021      
Ersa STGW(T)80V60DF      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STGW80V60DF obs 01/Dec/2023      
Ersa STGW(T)80V60DF      

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