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STGWA25H120DF2
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STGWA25H120DF2 Description
STGWA25H120DF2 Description
The STGWA25H120DF2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding applications in the electronics industry. This device offers a range of advanced features and benefits, making it an ideal choice for professionals seeking reliable and efficient power management solutions.
STGWA25H120DF2 Features
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Technical Specifications:
- Reverse Recovery Time (trr): 303 ns
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Td (on/off) @ 25°C: 29ns/130ns
- Current - Collector (Ic) (Max): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
- Gate Charge: 100 nC
- Power - Max: 375 W
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Performance Benefits:
- Low switching energy: 600µJ (on), 700µJ (off)
- Fast switching times, contributing to high efficiency
- Low on-state voltage drop, reducing power losses
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Unique Features and Advantages:
- Trench Field Stop IGBT technology for improved performance
- Through-hole mounting type for easy integration into existing designs
- REACH Unaffected and ROHS3 Compliant, ensuring environmental sustainability
STGWA25H120DF2 Applications
The STGWA25H120DF2 is ideal for a variety of applications where high power management and efficiency are crucial:
- Industrial Automation: Used in motor drives and power supplies for efficient energy management.
- Renewable Energy: Employed in solar inverters and wind power systems for reliable power conversion.
- Electric Vehicles: Integrated into electric vehicle chargers and powertrain systems for optimal performance.
- Power Supplies: Utilized in high-power switching applications for efficient energy distribution.
Conclusion of STGWA25H120DF2
The STGWA25H120DF2 from STMicroelectronics stands out as a reliable and efficient IGBT solution for high-power applications. Its advanced technical specifications, performance benefits, and unique features make it an excellent choice for professionals in the electronics industry. With its focus on sustainability and compliance, the STGWA25H120DF2 is not only a powerful component but also a responsible choice for the future of electronics.



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