STMicroelectronics_STGWT40H65FB

STMicroelectronics
STGWT40H65FB  
Single IGBTs

STMicroelectronics
STGWT40H65FB
279-STGWT40H65FB
Ersa
STMicroelectronics-STGWT40H65FB-datasheets-6266548.pdf
IGBT 650V 80A 283W TO3P-3L
In Stock : 465

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STGWT40H65FB Description

STGWT40H65FB Description

STGWT40H65FB is an obsolete single IGBT from STMicroelectronics, designed for high-power applications. It features a Trench Field Stop IGBT type and is packaged in a through-hole TO3P-3L tube. With a maximum collector-emitter breakdown voltage of 650V, it can handle a continuous collector current of 80A and a pulsed collector current of 160A. The device has a maximum power rating of 283W and a low on-state voltage of 2.3V at 15V gate drive, 40A collector current.

STGWT40H65FB Features

  • 650V collector-emitter breakdown voltage for high-voltage applications
  • 80A continuous collector current and 160A pulsed collector current for high-power handling
  • 283W maximum power rating for efficient power management
  • Low on-state voltage of 2.3V at 15V gate drive, 40A collector current for reduced power loss
  • Trench Field Stop IGBT technology for improved switching performance and reduced conduction losses
  • Fast switching times of 40ns on and 142ns off at 25°C for efficient operation
  • 210nC gate charge for quick gate control
  • REACH unaffected and RoHS3 compliant for environmental compliance
  • Moisture Sensitivity Level 1 for unlimited storage time before reflow soldering

STGWT40H65FB Applications

STGWT40H65FB is ideal for high-power applications requiring efficient switching and low conduction losses. Some specific use cases include:

  1. Industrial motor drives: The high current and power ratings make it suitable for controlling large motors in industrial applications.
  2. Power supplies: The low on-state voltage and fast switching times enable efficient power conversion in high-power supplies.
  3. Renewable energy systems: The device's high voltage and power ratings are well-suited for solar inverters and wind turbine converters.
  4. Electric vehicles: The high current and power ratings, along with fast switching times, make it suitable for electric vehicle charging systems and traction motor controls.

Conclusion of STGWT40H65FB

STGWT40H65FB is a high-performance, obsolete single IGBT from STMicroelectronics, designed for high-power applications. Its unique features, such as Trench Field Stop technology, low on-state voltage, and fast switching times, provide significant advantages over similar models. Although it is now obsolete, it remains a suitable choice for high-power applications where efficient switching and low conduction losses are critical.

Tech Specifications

Product Status
Voltage - Collector Emitter Breakdown (Max)
Td (on/off) @ 25°C
Supplier Device Package
Package / Case
REACH Status
Mfr
IGBT Type
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
Input Type
Test Condition
Switching Energy
Current - Collector (Ic) (Max)
ECCN
Mounting Type
Current - Collector Pulsed (Icm)
Series
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
HTSUS
Package
Base Product Number
Configuration
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Technology
Typical Collector Emitter Saturation Voltage (V)
Package Height
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Supplier Temperature Grade
Standard Package Name
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Tab
Lead Shape
Part Status
SVHC
Package Width

STGWT40H65FB Documents

Download datasheets and manufacturer documentation for STGWT40H65FB

Ersa STGW(T)40H65FB      
Ersa Mult Dev OBS 8/Mar/2019      
Ersa STGW(T)40H65FB      

Shopping Guide

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