STMicroelectronics_STN3NF06L

STMicroelectronics
STN3NF06L  
Single FETs, MOSFETs

STMicroelectronics
STN3NF06L
278-STN3NF06L
MOSFET N-CH 60V 4A SOT223
In Stock : 59061

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STN3NF06L Description

STN3NF06L is a low-voltage, high-speed N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including low-voltage power switching and motor control.

Description:

The STN3NF06L is a surface-mount MOSFET with a drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 42A, and a gate-source voltage (Vgs) of ±20V. It features a low on-state resistance (Rds(on)) of 6.5mΩ, which helps to minimize power dissipation and improve efficiency.

Features:

  • Low on-state resistance (Rds(on)) of 6.5mΩ for high efficiency
  • High drain-source voltage (Vds) of 60V for use in a wide range of applications
  • Continuous drain current (Id) of 42A for high current applications
  • Fast switching speed for use in high-frequency applications
  • Low gate charge for reduced switching losses
  • Logic-level gate drive for easy integration with microcontrollers and other logic circuits
  • Avalanche energy rating of 200mJ for robust operation in demanding environments

Applications:

The STN3NF06L is suitable for use in a variety of applications, including:

  1. Low-voltage power switching
  2. Motor control
  3. Battery protection circuits
  4. DC-DC converters
  5. Inverters
  6. Class D audio amplifiers
  7. LED lighting

Overall, the STN3NF06L is a versatile and efficient MOSFET that can be used in a wide range of applications where low-voltage, high-speed switching is required. Its low on-state resistance and fast switching speed make it an excellent choice for power switching and motor control applications, while its logic-level gate drive and robust operation make it suitable for use in demanding environments.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STN3NF06L Documents

Download datasheets and manufacturer documentation for STN3NF06L

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