STMicroelectronics_STP28N65M2

STMicroelectronics
STP28N65M2  
Single FETs, MOSFETs

STMicroelectronics
STP28N65M2
278-STP28N65M2
Ersa
STMicroelectronics-STP28N65M2-datasheets-10936677.pdf
MOSFET N-CH 650V 20A TO220
In Stock : 1000

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STP28N65M2 Description

STP28N65M2 Description

The STP28N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage of 650V and a continuous drain current of 20A at 25°C, this device is well-suited for demanding power electronics applications. The STP28N65M2 features a low on-resistance of 180mOhm at 10A and 10V, ensuring efficient power dissipation and minimizing power losses.

STP28N65M2 Features

  • 650V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
  • 20A Continuous Drain Current (Id): High current capacity for power electronics.
  • 180mOhm On-Resistance (Rds On): Low resistance for efficient power dissipation.
  • 35nC Maximum Gate Charge (Qg): Minimizes power losses in the gate drive circuit.
  • 1440pF Maximum Input Capacitance (Ciss): Facilitates high-speed switching.
  • 4V Maximum Threshold Voltage (Vgs(th)): Ensures reliable device turn-on.
  • 10V Maximum Drive Voltage: Compatible with various gate drive circuits.
  • 170W Maximum Power Dissipation (Tc): Suitable for high-power applications.
  • 150°C Maximum Operating Temperature (TJ): Designed for high-temperature environments.
  • ROHS3 Compliance: Environmentally friendly and suitable for green electronics.
  • REACH Unaffected Status: Compliant with European chemical regulations.

STP28N65M2 Applications

The STP28N65M2 is ideal for a variety of power electronics applications, including:

  1. Power Supplies: High-efficiency power conversion in switch-mode power supplies (SMPS).
  2. Motor Controls: Reliable and efficient motor drive in industrial and automotive applications.
  3. Inverters: High-voltage and high-current handling in solar and electric vehicle inverters.
  4. Battery Management Systems: Efficient battery charging and protection in energy storage systems.

Conclusion of STP28N65M2

The STP28N65M2 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and compliance with environmental regulations make it an excellent choice for power supplies, motor controls, inverters, and battery management systems. With its robust performance and unique features, the STP28N65M2 offers a reliable and efficient solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP28N65M2 Documents

Download datasheets and manufacturer documentation for STP28N65M2

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