STMicroelectronics_STS5DNF60L

STMicroelectronics
STS5DNF60L  
FET, MOSFET Arrays

STMicroelectronics
STS5DNF60L
289-STS5DNF60L
Ersa
STMicroelectronics-STS5DNF60L-datasheets-9917864.pdf
MOSFET 2N-CH 60V 5A 8SOIC
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STS5DNF60L Description

STS5DNF60L Description

The STS5DNF60L is a high-performance MOSFET from STMicroelectronics, designed for automotive applications. It features a 2N-channel, 60V drain-source voltage, and a continuous drain current of 5A at 25°C. With a logic level gate, this MOSFET is ideal for low-voltage, high-current applications. The STS5DNF60L is mounted on a surface and comes in an 8-pin SOIC package, making it suitable for compact designs.

STS5DNF60L Features

  • Technology: MOSFET (Metal Oxide), providing excellent electrical performance and reliability.
  • Input Capacitance (Ciss): 1030pF @ 25V, ensuring fast switching speeds and low power consumption.
  • Gate Charge (Qg): 15nC @ 4.5V, reducing switching losses and improving efficiency.
  • Rds On (Max): 45mOhm @ 2A, 10V, offering low on-resistance for high-efficiency power management.
  • Vgs(th) (Max): 2.5V @ 250µA, allowing for easy gate drive and control.
  • Power - Max: 2W, suitable for various power management applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in humid environments.
  • REACH Status: REACH Unaffected, compliant with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Grade: Automotive, designed for demanding automotive applications.

STS5DNF60L Applications

The STS5DNF60L is ideal for a variety of applications, including:

  1. Automotive Power Management: Its high current and voltage ratings make it suitable for automotive power management systems, such as battery management and inverter control.
  2. Industrial Control Systems: The STS5DNF60L's robust performance and automotive-grade design make it ideal for industrial control systems, where reliability and efficiency are critical.
  3. Low-Voltage Power Supplies: Its low on-resistance and high current capabilities make it suitable for low-voltage power supply designs, such as DC-DC converters and power distribution systems.

Conclusion of STS5DNF60L

The STS5DNF60L is a versatile and high-performance MOSFET from STMicroelectronics, designed for demanding automotive and industrial applications. Its unique combination of low on-resistance, high current and voltage ratings, and automotive-grade design make it an excellent choice for power management, industrial control systems, and low-voltage power supplies. With its REACH and RoHS compliance, the STS5DNF60L is not only a powerful solution but also an environmentally responsible choice.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STS5DNF60L Documents

Download datasheets and manufacturer documentation for STS5DNF60L

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