STMicroelectronics

STV240N75F3

STV240N75F3 Description

The STV240N75F3 from STMicroelectronics is a high-performance N-channel power MOSFET designed for demanding power management applications. Part of the STripFET™ III series, it features a 75V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 240A (at Tc=25°C), making it ideal for high-current switching applications. With an ultra-low on-resistance (Rds(on)) of just 2.6mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing efficiency in power systems. The device is housed in a surface-mount 10POWERSO package, optimized for thermal performance and compact PCB layouts.

STV240N75F3 Features

• Low Rds(on): 2.6mΩ @ 120A, 10V ensures minimal power dissipation.
• High Current Handling: 240A continuous drain current (Tc) for robust performance.
• Fast Switching: Low gate charge (Qg) of 100nC @ 10V and input capacitance (Ciss) of 6800pF @ 25V enable efficient high-frequency operation.
• Thermal Efficiency: 300W max power dissipation (Tc) with excellent thermal management.
• Wide Gate-Source Voltage Range: ±20V for flexible drive compatibility.
• Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

STV240N75F3 Applications

This MOSFET excels in high-power applications requiring efficiency and thermal stability, including:

• DC-DC Converters: High-efficiency buck/boost topologies.
• Motor Drives: Robust current handling for industrial and automotive systems.
• Power Supplies: Server, telecom, and industrial SMPS designs.
• Battery Management Systems (BMS): Low-loss switching for high-current paths.
• Inverters & UPS: High-reliability power conversion.

Conclusion of STV240N75F3

The STV240N75F3 stands out for its ultra-low Rds(on), high current capability, and thermal efficiency, making it a top choice for power designers. While marked obsolete, its performance remains competitive for legacy or specialized designs. Its STripFET™ III technology ensures superior switching characteristics, reducing losses in high-power applications. Engineers seeking a balance of efficiency, power density, and reliability should consider this MOSFET for demanding power electronics projects.