Texas Instruments_CSD13383F4T

Texas Instruments
CSD13383F4T  
Single FETs, MOSFETs

Texas Instruments
CSD13383F4T
278-CSD13383F4T
Ersa
Texas Instruments-CSD13383F4T-datasheets-10094992.pdf
MOSFET N-CH 12V 2.9A 3PICOSTAR
In Stock : 794

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CSD13383F4T Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the CSD13383F4T belongs to can be classified under the Discrete Semiconductors. CSD13383F4T is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. CSD13383F4T provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Texas Instruments plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Texas Instruments is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Texas Instruments builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Drain Source Resistance (MOhm)
Logic level
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
QGS (typ) (nC)
REACH
Series
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

CSD13383F4T Documents

Download datasheets and manufacturer documentation for CSD13383F4T

Ersa CSD13383F4      
Ersa Carrier Tape 28/Aug/2018      
Ersa CSD13383F4      
Ersa DSBGA/Usip 14/Sep/2016       CSDx 15/Mar/2022      

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