Texas Instruments_CSD15380F3T

Texas Instruments
CSD15380F3T  
Single FETs, MOSFETs

Texas Instruments
CSD15380F3T
278-CSD15380F3T
Ersa
Texas Instruments-CSD15380F3T-datasheets-2165939.pdf
MOSFET N-CH 20V 500MA 3PICOSTAR
In Stock : 643

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

CSD15380F3T Description

CSD15380F3T Description

The CSD15380F3T from Texas Instruments is a N-channel FemtoFET™ MOSFET designed for high-efficiency, low-power applications. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 500mA, this surface-mount device is optimized for space-constrained designs. It features an ultra-low input capacitance (Ciss) of 10.5 pF @ 10V and a gate charge (Qg) of just 0.281 nC @ 10V, enabling fast switching and reduced power losses. The Rds(on) of 1190mΩ @ 100mA, 8V ensures efficient conduction, while its 1.35V threshold voltage (Vgs(th)) makes it compatible with low-voltage logic. Packaged in 3-pin PICOSTAR™ (Tape & Reel), it is ideal for portable and battery-powered systems.

CSD15380F3T Features

  • Ultra-Compact Design: FemtoFET™ technology minimizes footprint, perfect for high-density PCBs.
  • Low Gate Charge & Capacitance: Enhances switching efficiency, reducing energy losses in high-frequency applications.
  • Low Threshold Voltage (1.35V): Compatible with 1.8V/3.3V logic levels, eliminating need for gate drivers.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory standards for global use.
  • 500mW Power Dissipation: Reliable thermal performance in compact layouts.
  • MSL1 (Unlimited): No baking required, simplifying assembly processes.

CSD15380F3T Applications

  • Portable Electronics: Smartphones, wearables, and IoT devices benefit from its low power and small size.
  • Power Management: Load switches, DC-DC converters, and battery protection circuits.
  • Signal Switching: High-speed data multiplexing and analog switching.
  • Embedded Systems: Low-voltage microcontrollers and sensor interfaces.

Conclusion of CSD15380F3T

The CSD15380F3T stands out for its miniaturized form factor, low-power operation, and high switching efficiency, making it a superior choice for modern electronics. Its FemtoFET™ architecture outperforms traditional MOSFETs in space-constrained designs, while its low gate drive requirements simplify circuit design. Whether for consumer gadgets or industrial systems, this MOSFET delivers reliability, efficiency, and compliance with stringent environmental standards.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Typical Gate Plateau Voltage (V)
Material
Package Length
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD15380F3T Documents

Download datasheets and manufacturer documentation for CSD15380F3T

Ersa CSD15380F3 Datasheet      
Ersa CSD15380F3 Datasheet      
Ersa CSDx 15/Mar/2022      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service