Texas Instruments_CSD25404Q3T

Texas Instruments
CSD25404Q3T  
Single FETs, MOSFETs

Texas Instruments
CSD25404Q3T
278-CSD25404Q3T
Ersa
Texas Instruments-CSD25404Q3T-datasheets-4938976.pdf
MOSFET P-CH 20V 104A 8VSON
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    CSD25404Q3T Description

    CSD25404Q3T is a high-performance, low-power, gate driver IC from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including automotive, industrial, and renewable energy systems.

    Description:

    The CSD25404Q3T is a monolithic gate driver IC that provides high-speed, precise control of power MOSFETs and IGBTs. It features a high-voltage, integrated gate driver with independent high and low side control. The device also includes advanced protection features, such as overcurrent protection, undervoltage lockout, and thermal shutdown.

    Features:

    1. High-voltage integrated gate driver: The CSD25404Q3T can drive power MOSFETs and IGBTs with voltage ratings up to 900V.
    2. Independent high and low side control: The device features separate high and low side gate drivers, allowing for precise control of the power switches.
    3. Advanced protection features: The CSD25404Q3T includes overcurrent protection, undervoltage lockout, and thermal shutdown to protect the power switches and the overall system.
    4. Low power consumption: The device is designed for low power operation, making it suitable for battery-powered applications.
    5. Small package size: The CSD25404Q3T is available in a compact 3mm x 3mm QFN package, making it easy to integrate into a wide range of applications.

    Applications:

    The CSD25404Q3T is suitable for a wide range of applications that require high-speed, precise control of power MOSFETs and IGBTs. Some of the key applications include:

    1. Automotive applications: The device can be used in electric and hybrid vehicles for motor control, power steering, and battery management systems.
    2. Industrial applications: The CSD25404Q3T can be used in motor control applications, such as robotics, conveyor systems, and industrial machinery.
    3. Renewable energy systems: The device can be used in solar inverters and wind turbine power converters for efficient power conversion and control.
    4. Power supplies: The CSD25404Q3T can be used in high-efficiency power supply designs, such as switched-mode power supplies (SMPS) and battery chargers.
    5. Motor control: The device can be used in brushless DC (BLDC) motor control applications, providing precise control of the motor speed and torque.

    In summary, the CSD25404Q3T from Texas Instruments is a versatile and high-performance gate driver IC that can be used in a wide range of applications requiring precise control of power MOSFETs and IGBTs. Its advanced protection features, low power consumption, and compact package size make it an ideal choice for automotive, industrial, and renewable energy systems.

    Tech Specifications

    Unit Weight
    Configuration
    Rds(on) at VGS=2.5 V (max) (mΩ)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD25404Q3T Documents

    Download datasheets and manufacturer documentation for CSD25404Q3T

    Ersa CSD25404Q3 Datasheet      
    Ersa CSD25404Q3 Datasheet      

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