Texas Instruments_CSD18532NQ5B

Texas Instruments
CSD18532NQ5B  
Single FETs, MOSFETs

Texas Instruments
CSD18532NQ5B
278-CSD18532NQ5B
Ersa
Texas Instruments-CSD18532NQ5B-datasheets-980469.pdf
MOSFET N-CH 60V 22A/100A 8VSON
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    CSD18532NQ5B Description

    CSD18532NQ5B Description

    The CSD18532NQ5B is a high-performance N-Channel MOSFET from Texas Instruments, designed for applications requiring high efficiency and reliability. This device features a NexFET™ series, which is known for its excellent electrical characteristics and robustness. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C and 100A at Tc, the CSD18532NQ5B is suitable for a wide range of power management and motor control applications.

    CSD18532NQ5B Features

    • NexFET™ Series: Offers superior electrical performance and robustness.
    • 60V Drain-to-Source Voltage (Vdss): Suitable for high-voltage applications.
    • 22A Continuous Drain Current (Id) at 25°C and 100A at Tc: Capable of handling high current loads.
    • 3.4mOhm Rds On (Max) @ 25A, 10V: Low on-resistance for high efficiency.
    • 3.4V Vgs(th) (Max) @ 250µA: Ensures reliable turn-on and turn-off.
    • 64 nC Gate Charge (Qg) (Max) @ 10V: Minimizes power loss and improves efficiency.
    • ±20V Vgs (Max): Provides a wide voltage range for gate control.
    • 5340 pF Input Capacitance (Ciss) (Max) @ 30V: Minimizes capacitive effects.
    • 3.2W Power Dissipation (Max) (Ta): Capable of dissipating heat effectively.
    • Surface Mount Mounting Type: Ideal for space-constrained applications.
    • ROHS3 Compliant: Meets environmental regulations.
    • REACH Unaffected: Compliant with European chemical regulations.
    • Moisture Sensitivity Level (MSL) 1 (Unlimited): Suitable for various environmental conditions.

    CSD18532NQ5B Applications

    The CSD18532NQ5B is ideal for a variety of applications where high efficiency, reliability, and performance are critical. Some specific use cases include:

    1. Power management systems: Due to its low on-resistance and high current capability, the CSD18532NQ5B is well-suited for power management applications, such as battery management and power conversion systems.
    2. Motor control: The high voltage and current ratings make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
    3. Industrial automation: The robustness and reliability of the NexFET™ series make the CSD18532NQ5B ideal for industrial automation applications, such as robotic actuators and control systems.
    4. Renewable energy systems: The device's high voltage and current ratings make it suitable for renewable energy systems, such as solar inverters and wind power converters.

    Conclusion of CSD18532NQ5B

    The CSD18532NQ5B is a high-performance N-Channel MOSFET from Texas Instruments, offering excellent electrical characteristics, robustness, and reliability. Its NexFET™ series design, combined with its high voltage and current ratings, make it an ideal choice for a wide range of power management, motor control, and industrial automation applications. With its low on-resistance and compliance with environmental regulations, the CSD18532NQ5B is a reliable and efficient solution for demanding applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Typical Gate to Source Charge (nC)
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Material
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD18532NQ5B Documents

    Download datasheets and manufacturer documentation for CSD18532NQ5B

    Ersa Function Diagram      
    Ersa Product change notification (PDF)       PROCESS CHANGE NOTIFICATION (PDF)       Qualification of Reduced Wire Bond diameter for the Family of Discrete Clip & Power Block Devices (PDF)       Qualification of TI Clark as additional Assembly site for selected VSON packaged products (PDF)       Product Change Notification (PDF)      
    Ersa CSD18532NQ5B PSpice Model (Rev. B)      

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