The CSD17555Q5A is a high-performance N-Channel MOSFET from Texas Instruments, designed for applications requiring high efficiency and low power dissipation. With a drain-to-source voltage of 30V and continuous drain current ratings of 24A at 25°C and 100A at case temperature, this device is well-suited for a variety of power management and motor control applications.
CSD17555Q5A Features
High Input Capacitance (Ciss): The CSD17555Q5A boasts an impressive input capacitance of 4650 pF at 15V, which helps reduce switching losses and improve overall system efficiency.
Low Gate Charge (Qg): With a maximum gate charge of 28 nC at 4.5V, this MOSFET minimizes power dissipation during switching, contributing to longer device life and reduced thermal management requirements.
Robust Voltage Ratings: The device can handle gate-source voltages up to ±20V, providing flexibility in various circuit designs.
Low On-Resistance (Rds On): At 25A and 10V, the CSD17555Q5A exhibits a low on-resistance of 2.7mOhm, which minimizes power losses and improves efficiency in high-current applications.
Surface Mount Technology: The surface mount packaging allows for compact and efficient PCB layouts, ideal for space-constrained designs.
Compliance and Certifications: The CSD17555Q5A is REACH Unaffected and RoHS3 Compliant, ensuring environmental and regulatory compliance in various markets.
CSD17555Q5A Applications
The CSD17555Q5A is an ideal choice for applications where high efficiency and robust performance are critical:
Power Management: In power supply designs, the low on-resistance and high current ratings make it suitable for high-efficiency power conversion.
Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor drivers in industrial and automotive applications.
Automotive: Due to its high current and voltage capabilities, the CSD17555Q5A is well-suited for automotive applications such as electric power steering and battery management systems.
Conclusion of CSD17555Q5A
The CSD17555Q5A from Texas Instruments stands out for its combination of high input capacitance, low gate charge, and robust voltage ratings, making it a top choice for demanding power management and motor control applications. Its unique features, such as low on-resistance and compliance with environmental standards, further enhance its appeal in the electronics industry. With its NexFET™ series pedigree, the CSD17555Q5A delivers superior performance and reliability, making it a preferred choice for engineers designing cutting-edge electronic systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Id - Continuous Drain Current
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD17555Q5A Documents
Download datasheets and manufacturer documentation for CSD17555Q5A
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Shipping Rate
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