Texas Instruments_CSD19538Q3AT

Texas Instruments
CSD19538Q3AT  
Single FETs, MOSFETs

Texas Instruments
CSD19538Q3AT
278-CSD19538Q3AT
Ersa
Texas Instruments-CSD19538Q3AT-datasheets-11081731.pdf
MOSFET N-CH 100V 15A 8VSON
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    CSD19538Q3AT Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the CSD19538Q3AT belongs to can be classified under the Discrete Semiconductors. CSD19538Q3AT is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. CSD19538Q3AT provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Texas Instruments plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Texas Instruments is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Texas Instruments builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Gate Resistance (Ohm)
    Logic level
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Diode Forward Voltage (V)
    Type
    Typical Output Capacitance (pF)
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Operating Junction Temperature (°C)
    Pd - Power Dissipation
    Base Product Number

    CSD19538Q3AT Documents

    Download datasheets and manufacturer documentation for CSD19538Q3AT

    Ersa CSD19538Q3A Datasheet      
    Ersa CSD19538Q3A Datasheet      

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