Texas Instruments_CSD18532Q5B

Texas Instruments
CSD18532Q5B  
Single FETs, MOSFETs

Texas Instruments
CSD18532Q5B
278-CSD18532Q5B
Ersa
Texas Instruments-CSD18532Q5B-datasheets-4061526.pdf
MOSFET N-CH 60V 100A 8VSON
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    CSD18532Q5B Description

    CSD18532Q5B is a high voltage, high current MOSFET driver from Texas Instruments. It is designed to drive high voltage, high current N-channel MOSFETs in a variety of applications, including motor control, power conversion, and renewable energy systems.

    Description:

    The CSD18532Q5B is a monolithic high voltage half-bridge gate driver with high side and low side drive capability. It features a high voltage capability of up to 60V and can handle peak currents of up to 8A. The device is available in a 5-pin QFN package.

    Features:

    • High voltage operation up to 60V
    • High current capability of up to 8A peak
    • Monolithic high voltage half-bridge gate driver
    • High side and low side drive capability
    • Short circuit protection
    • Undervoltage lockout
    • Thermal shutdown
    • Enable pin for easy control

    Applications:

    • Motor control
    • Power conversion
    • Renewable energy systems
    • Industrial control
    • Automotive applications

    The CSD18532Q5B is a versatile MOSFET driver that can be used in a wide range of high voltage, high current applications. Its monolithic design and high voltage capability make it an ideal choice for driving large MOSFETs in demanding applications. Additionally, its built-in protection features ensure reliable operation and help to extend the life of the MOSFETs being driven.

    Tech Specifications

    Unit Weight
    VDS (V)
    QGD (typ) (nC)
    Configuration
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Channel Mode
    Product Status
    Fall Time
    RoHS
    Drain to Source Voltage (Vdss)
    Tradename
    Supplier Package
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Carrier
    Rds(on) at VGS=10 V (max) (mΩ)
    Rds On - Drain-Source Resistance
    VGSTH typ (typ) (V)
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Operating temperature range (°C)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Pins
    USHTS
    Logic level
    FET Type
    Rating
    Supplier Device Package
    Qg - Gate Charge
    Power Dissipation (Max)
    QG (typ) (nC)
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    QGS (typ) (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    REACH
    Series
    Type
    Length
    Forward Transconductance - Min
    Lead finish / Ball material
    Pd - Power Dissipation
    VGS (V)
    Base Product Number

    CSD18532Q5B Documents

    Download datasheets and manufacturer documentation for CSD18532Q5B

    Ersa VSON Additional Assembly Site 28/Oct/2013      
    Ersa CSD18532Q5B      
    Ersa CSD18532Q5B      
    Ersa Qualification Revision A 01/Jul/2014      

    Shopping Guide

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