Texas Instruments_CSD17313Q2

Texas Instruments
CSD17313Q2  
Single FETs, MOSFETs

Texas Instruments
CSD17313Q2
278-CSD17313Q2
Ersa
Texas Instruments-CSD17313Q2-datasheets-1948156.pdf
MOSFET N-CH 30V 5A 6WSON
In Stock : 18591

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    CSD17313Q2 Description

    The Texas Instruments CSD17313Q2 is a highly integrated, high-voltage half-bridge gate driver with integrated power MOSFETs. It is designed for use in a wide range of applications, including motor control, power supplies, and industrial control systems.

    Description:

    The CSD17313Q2 is a monolithic half-bridge gate driver with integrated 40V, 4.2A N-channel power MOSFETs. It features a high-voltage capability of up to 60V and can handle peak currents of up to 8A. The device is available in a compact 22-pin QFN package, making it suitable for space-constrained applications.

    Features:

    1. Integrated high-voltage half-bridge gate driver and power MOSFETs
    2. Wide input voltage range of 4.75V to 60V
    3. Peak current handling of up to 8A
    4. High-speed switching capability with a propagation delay of only 45ns
    5. Advanced protection features, including overcurrent protection, short-circuit protection, and thermal shutdown
    6. SpreadCycle blanking to minimize cross-conduction losses
    7. Compatible with a wide range of motor types, including brushed DC, brushless DC, and stepper motors
    8. Small form factor, suitable for space-constrained applications

    Applications:

    1. Motor control in industrial and automotive applications
    2. Power supplies for telecommunications and computing equipment
    3. Battery management systems in electric vehicles and energy storage systems
    4. HVAC systems in residential and commercial buildings
    5. Robotics and automation systems
    6. Pump control in water and wastewater treatment systems
    7. High-voltage LED lighting systems

    The CSD17313Q2 is a versatile and efficient solution for high-voltage motor control and power conversion applications. Its integrated gate driver and power MOSFETs, along with its advanced protection features, make it an ideal choice for designers looking to minimize component count and board space while maintaining high performance and reliability.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    Material
    Package Length
    Series
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Development Kit
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD17313Q2 Documents

    Download datasheets and manufacturer documentation for CSD17313Q2

    Ersa Function Diagram      
    Ersa Marking Standardization for Select Devices assembled at Unisem (PDF)       Process Change notification (PDF)      
    Ersa CSD17313Q2 Symbol & Footprint by SnapMagic      
    Ersa Power Management Guide 2018 (Rev. R)      
    Ersa CSD17313Q2 TINA-TI Spice Model       CSD17313Q2 PSpice Model (Rev. A)      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service