Texas Instruments_CSD18514Q5A

Texas Instruments
CSD18514Q5A  
Single FETs, MOSFETs

Texas Instruments
CSD18514Q5A
278-CSD18514Q5A
Ersa
Texas Instruments-CSD18514Q5A-datasheets-10811876.pdf
MOSFET N-CH 40V 89A 8VSON
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    CSD18514Q5A Description

    The Texas Instruments CSD18514Q5A is a highly integrated gate driver IC that is specifically designed for use in battery management systems (BMS) for electric vehicles (EVs) and hybrid electric vehicles (HEVs). It is a member of the company's portfolio of silicon carbide (SiC) power management solutions.

    Description:

    The CSD18514Q5A is a highly integrated gate driver IC that is designed to drive SiC MOSFETs in high-voltage applications. It features a compact, 5mm x 5mm QFN package and is designed to operate over a wide input voltage range of 4.75V to 60V. The device is capable of driving up to four SiC MOSFETs with a maximum current of ±10A per channel.

    Features:

    • Integrated gate driver for SiC MOSFETs
    • Wide input voltage range of 4.75V to 60V
    • Capable of driving up to four SiC MOSFETs
    • Maximum current of ±10A per channel
    • Compact 5mm x 5mm QFN package
    • Designed for use in battery management systems for electric and hybrid vehicles

    Applications:

    The CSD18514Q5A is designed for use in high-voltage battery management systems for electric and hybrid vehicles. It is particularly well-suited for use in applications that require high efficiency and high reliability, such as in the powertrain systems of these vehicles. The device can also be used in other high-voltage applications that require efficient and reliable power management, such as in industrial motor drives and renewable energy systems.

    Overall, the Texas Instruments CSD18514Q5A is a highly integrated gate driver IC that is specifically designed for use in high-voltage battery management systems for electric and hybrid vehicles. Its compact size, wide input voltage range, and ability to drive multiple SiC MOSFETs make it a versatile and efficient solution for these applications.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Rds(on) at VGS=10 V (max) (mΩ)
    Maximum Continuous Drain Current (A)
    VGSTH typ (typ) (V)
    Operating temperature range (°C)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Logic level
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Lead finish / Ball material
    Package Width
    VGS (V)
    VDS (V)
    QGD (typ) (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Carrier
    Rds On - Drain-Source Resistance
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Pins
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Rating
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Typical Fall Time (ns)
    Mfr
    Height
    Mounting Style
    Rds(on) at VGS=4.5 V (max) (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Material
    Package Length
    QGS (typ) (nC)
    REACH
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    CSD18514Q5A Documents

    Download datasheets and manufacturer documentation for CSD18514Q5A

    Ersa CSD18514Q5A      
    Ersa CSD18514Q5A      

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