The CSD16415Q5T is a high-performance N-Channel MOSFET from Texas Instruments, designed for applications requiring high efficiency and fast switching speeds. This device features a NexFET™ series, which is known for its excellent electrical characteristics and robust performance. With a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 100A at 25°C, the CSD16415Q5T is suitable for a wide range of power management and motor control applications.
CSD16415Q5T Features
NexFET™ Series: Offers superior electrical performance and reliability compared to traditional MOSFETs.
Low Rds On (1.15mOhm): Enables high efficiency and low power loss in high-current applications.
High Input Capacitance (Ciss) of 4100 pF: Minimizes input charge and switching losses.
Low Gate Charge (Qg) of 29 nC: Reduces switching losses and improves efficiency.
Robust Drain to Source Voltage (Vdss) of 25V: Suitable for high-voltage applications.
Continuous Drain Current (Id) of 100A at 25°C: Capable of handling high power loads.
Drive Voltage (Max Rds On, Min Rds On) of 4.5V and 10V: Provides flexibility in gate drive requirements.
Surface Mount Packaging: Ideal for space-constrained applications and high-density PCB layouts.
REACH Unaffected and RoHS3 Compliant: Ensures environmental compliance and long-term availability.
CSD16415Q5T Applications
The CSD16415Q5T is ideal for a variety of applications where high efficiency, fast switching speeds, and robust performance are required. Some specific use cases include:
Power management systems: The low Rds On and high Vdss make it suitable for power conversion and regulation in various electronic devices.
Motor control applications: The high Id and low Qg enable efficient and fast control of electric motors in industrial and automotive applications.
Renewable energy systems: The device's high efficiency and robust performance make it suitable for solar inverters and wind turbine control systems.
Electric vehicles (EVs): The CSD16415Q5T can be used in EV charging systems, battery management, and motor control applications.
Conclusion of CSD16415Q5T
The CSD16415Q5T from Texas Instruments is a high-performance N-Channel MOSFET that offers excellent electrical characteristics, robust performance, and environmental compliance. Its unique features, such as low Rds On, high Ciss, and low Qg, make it an ideal choice for power management, motor control, and renewable energy applications. With its NexFET™ series advantages and wide range of applications, the CSD16415Q5T is a reliable and efficient solution for demanding electronic systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
Maximum Gate Resistance (Ohm)
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Material
Package Length
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD16415Q5T Documents
Download datasheets and manufacturer documentation for CSD16415Q5T
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