Texas Instruments
CSD18532KCS
Single FETs, MOSFETs
CSD18532KCS
278-CSD18532KCS
Texas Instruments-CSD18532KCS-datasheets-13051035.pdf
MOSFET N-CH 60V 100A TO220-3
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CSD18532KCS Description
The CSD18532KCS is a highly-integrated gate driver from Texas Instruments, specifically designed for use in battery management systems (BMS) and other applications requiring precise control of power switches. Here's a brief description, features, and applications of the CSD18532KCS:
Description:
The CSD18532KCS is a monolithic gate driver IC that provides high efficiency and precise control for power switches in a wide range of applications. It is designed to drive power MOSFETs, IGBTs, and SiC FETs with high-side and low-side gate drive capabilities. The device is offered in a compact and thermally efficient package, making it suitable for space-constrained applications.
Features:
- High-Side and Low-Side Gate Drive: The CSD18532KCS can drive both high-side and low-side power switches, making it versatile for various power conversion applications.
- High Efficiency: The device is designed for high efficiency, reducing power losses and improving overall system performance.
- Integrated Bootstrap Diode: It features an integrated bootstrap diode, which simplifies the design and reduces the component count in the gate drive circuit.
- Short Circuit Protection: The IC includes short circuit protection to safeguard the power switches from damage due to short circuits.
- Desaturation Protection: The gate driver provides desaturation protection to prevent the power switch from entering a saturated region, which can cause excessive power dissipation and potential damage.
- Spread Spectrum Frequency Modulation: This feature helps reduce electromagnetic interference (EMI) and improves the overall system reliability.
- Thermal Protection: The CSD18532KCS includes thermal shutdown protection to prevent damage due to overheating.
- Small Package Size: The device is available in a compact package, making it suitable for space-constrained applications.
Applications:
- Battery Management Systems (BMS): The CSD18532KCS is particularly well-suited for driving power switches in BMS applications, such as in electric vehicles (EVs), plug-in hybrid electric vehicles (PHEVs), and energy storage systems.
- DC-DC Converters: The gate driver can be used in various DC-DC converter topologies, including buck, boost, and buck-boost converters.
- Motor Drives: The IC is suitable for driving power switches in motor drive applications, such as in industrial automation, robotics, and appliance motor control.
- Power Supplies: The CSD18532KCS can be used in power supply applications, including isolated and non-isolated designs.
- Solar Energy Systems: The gate driver is suitable for driving power switches in solar energy systems, such as in solar inverters and solar microinverters.
The CSD18532KCS from Texas Instruments is a versatile and efficient gate driver solution for a wide range of power management applications, offering high performance, reliability, and ease of use.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD18532KCS Documents
Download datasheets and manufacturer documentation for CSD18532KCS
Site Chg 04/Dec/2015 CSD18532KCS CSD18532KCS Related Parts
Shopping Guide
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