Texas Instruments_CSD16325Q5

Texas Instruments
CSD16325Q5  
Single FETs, MOSFETs

Texas Instruments
CSD16325Q5
278-CSD16325Q5
Ersa
Texas Instruments-CSD16325Q5-datasheets-5639032.pdf
MOSFET N-CH 25V 33A/100A 8VSON
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CSD16325Q5 Description

CSD16325Q5 Description

The CSD16325Q5 is a high-performance N-Channel MOSFET designed and manufactured by Texas Instruments. It features a NexFET™ series, offering superior performance in various applications. With a maximum drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 33A at 25°C and 100A at case temperature, this MOSFET is ideal for high-power applications. The device is surface-mountable and comes in a tape and reel (TR) packaging, making it suitable for automated assembly processes.

CSD16325Q5 Features

  • NexFET™ Series: Offers improved performance and reliability compared to traditional MOSFETs.
  • Maximum Drain-to-Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 33A at 25°C and 100A at case temperature
  • Maximum Power Dissipation (Pd): 3.1W (Ta)
  • Low Rds On (Max): 2mOhm at 30A, 8V
  • Maximum Gate Charge (Qg): 25nC at 4.5V
  • Maximum Input Capacitance (Ciss): 4000pF at 12.5V
  • Maximum Drive Voltage: 3V (Max Rds On) and 8V (Min Rds On)
  • Vgs(th) (Max): 1.4V at 250µA
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Unaffected and ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

CSD16325Q5 Applications

The CSD16325Q5 is ideal for various high-power applications, including:

  1. Motor control and drives
  2. Power management systems
  3. Renewable energy applications, such as solar inverters
  4. Industrial automation and control systems
  5. Automotive electronics, such as electric vehicle chargers and powertrain control
  6. High-efficiency power supplies and converters

Conclusion of CSD16325Q5

The CSD16325Q5 is a high-performance N-Channel MOSFET from Texas Instruments, offering superior performance and reliability in high-power applications. Its NexFET™ series, low Rds On, and high drain current capabilities make it an excellent choice for motor control, power management, and renewable energy applications. With its REACH unaffected and ROHS3 compliant status, the CSD16325Q5 is an environmentally friendly solution for your high-power electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD16325Q5 Documents

Download datasheets and manufacturer documentation for CSD16325Q5

Ersa Assembly/Test Site Revision C 09/Feb/2015      
Ersa CSD16325Q5      
Ersa CSD16325Q5      
Ersa Qualification Revision A 01/Jul/2014      

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