The CSD16325Q5 is a high-performance N-Channel MOSFET designed and manufactured by Texas Instruments. It features a NexFET™ series, offering superior performance in various applications. With a maximum drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 33A at 25°C and 100A at case temperature, this MOSFET is ideal for high-power applications. The device is surface-mountable and comes in a tape and reel (TR) packaging, making it suitable for automated assembly processes.
The CSD16325Q5 is ideal for various high-power applications, including:
The CSD16325Q5 is a high-performance N-Channel MOSFET from Texas Instruments, offering superior performance and reliability in high-power applications. Its NexFET™ series, low Rds On, and high drain current capabilities make it an excellent choice for motor control, power management, and renewable energy applications. With its REACH unaffected and ROHS3 compliant status, the CSD16325Q5 is an environmentally friendly solution for your high-power electronic designs.
Download datasheets and manufacturer documentation for CSD16325Q5