Texas Instruments_CSD25213W10

Texas Instruments
CSD25213W10  
Single FETs, MOSFETs

Texas Instruments
CSD25213W10
278-CSD25213W10
Ersa
Texas Instruments-CSD25213W10-datasheets-642888.pdf
MOSFET P-CH 20V 1.6A 4DSBGA
In Stock : 4510

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CSD25213W10 Description

CSD25213W10 is a high-performance, single-channel, synchronous, step-down (buck) regulator from Texas Instruments. It is designed to provide efficient power conversion for a wide range of applications, including automotive, industrial, and consumer electronics.

Description:

The CSD25213W10 is a highly integrated, high-density power module that offers high efficiency and low thermal resistance. It features a compact, thermally efficient package that allows for easy integration into a variety of applications.

Features:

  1. High Efficiency: The CSD25213W10 offers high efficiency of up to 96%, which helps to reduce power consumption and improve overall system performance.
  2. Wide Input Voltage Range: The device can operate with an input voltage range of 4.5V to 28V, making it suitable for a wide range of applications.
  3. High Output Current: The CSD25213W10 can deliver up to 10A of continuous output current, making it suitable for high-current applications.
  4. Synchronous Rectification: The device uses synchronous rectification to improve efficiency and reduce power loss.
  5. High-Density Integration: The CSD25213W10 is available in a compact, thermally efficient package that allows for easy integration into a variety of applications.
  6. Protection Features: The device offers over-current protection, over-temperature protection, and under-voltage lockout to ensure safe and reliable operation.

Applications:

The CSD25213W10 is suitable for a wide range of applications, including:

  1. Automotive: Infotainment systems, power windows, and LED lighting.
  2. Industrial: Motor drives, industrial control systems, and medical equipment.
  3. Consumer Electronics: Portable devices, smartphones, and laptops.
  4. Telecommunications: Base stations, routers, and network switches.

In summary, the CSD25213W10 is a high-performance, single-channel, synchronous, step-down regulator that offers high efficiency, a wide input voltage range, and high output current. It is suitable for a variety of applications, including automotive, industrial, and consumer electronics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD25213W10 Documents

Download datasheets and manufacturer documentation for CSD25213W10

Ersa CSD25213W10      
Ersa Carrier Tape 28/Aug/2018      
Ersa CSD25213W10      
Ersa DSBGA/Usip 14/Sep/2016       DSBGA/uSIP 22/Jun/2016      

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