Texas Instruments_CSD18510Q5B
CSD18510Q5B(1)
CSD18510Q5B(2)

Texas Instruments
CSD18510Q5B  
Single FETs, MOSFETs

Texas Instruments
CSD18510Q5B
278-CSD18510Q5B
Ersa
Texas Instruments-CSD18510Q5B-datasheets-1887178.pdf
MOSFET N-CH 40V 300A 8VSON
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    CSD18510Q5B Description

    CSD18510Q5B Description

    The CSD18510Q5B is a high-performance N-Channel MOSFET from Texas Instruments, designed for demanding power electronic applications. With its NexFET™ series, it offers superior performance, reliability, and efficiency. Key features include a maximum drain-source voltage of 40V, continuous drain current of 300A at 25°C, and a low on-resistance of 0.96mOhm at 32A and 10V gate-source voltage. The device is surface-mountable and comes in a tape and reel packaging.

    CSD18510Q5B Features

    • NexFET™ series for enhanced performance and reliability
    • 40V drain-source voltage (Vdss)
    • 300A continuous drain current at 25°C
    • Low on-resistance of 0.96mOhm at 32A and 10V Vgs
    • Surface-mountable for compact designs
    • Tape and reel packaging for efficient handling
    • Maximum gate-source voltage of ±20V
    • Drive voltage of 4.5V (maximum Rds On) and 10V (minimum Rds On)
    • Gate charge of 153nC at 10V Vgs
    • Input capacitance of 11.4nF at 20V Vds
    • Vgs(th) of 2.3V at 250µA Id
    • Power dissipation of 156W at Tc
    • Moisture sensitivity level (MSL) of 1 (unlimited)
    • REACH unaffected and RoHS3 compliant
    • EAR99 ECCN and HTSUS 8541.29.0095

    CSD18510Q5B Applications

    The CSD18510Q5B is ideal for various high-power applications, including:

    1. Motor control and drives
    2. Power supplies and converters
    3. Renewable energy systems (solar, wind)
    4. Electric vehicles and charging stations
    5. Industrial automation and control systems
    6. High-current switching and protection circuits

    Its low on-resistance, high current capability, and robust construction make it suitable for applications requiring high efficiency, fast switching, and reliable operation under harsh conditions.

    Conclusion of CSD18510Q5B

    The CSD18510Q5B from Texas Instruments is a powerful and reliable N-Channel MOSFET, offering superior performance and efficiency for demanding power electronic applications. Its NexFET™ technology, low on-resistance, and high current capability make it an excellent choice for motor control, power supplies, renewable energy systems, and more. With its REACH unaffected status, RoHS3 compliance, and moisture sensitivity level of 1, the CSD18510Q5B is a reliable and environmentally friendly solution for your high-power electronic needs.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Material
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD18510Q5B Documents

    Download datasheets and manufacturer documentation for CSD18510Q5B

    Ersa CSD18510Q5B TINA-TI Reference Design      
    Ersa CSD18510Q5B TINA-TI Spice Model       CSD18510Q5B PSpice Model (Rev. A)      

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