The CSD18510Q5B is a high-performance N-Channel MOSFET from Texas Instruments, designed for demanding power electronic applications. With its NexFET™ series, it offers superior performance, reliability, and efficiency. Key features include a maximum drain-source voltage of 40V, continuous drain current of 300A at 25°C, and a low on-resistance of 0.96mOhm at 32A and 10V gate-source voltage. The device is surface-mountable and comes in a tape and reel packaging.
The CSD18510Q5B is ideal for various high-power applications, including:
Its low on-resistance, high current capability, and robust construction make it suitable for applications requiring high efficiency, fast switching, and reliable operation under harsh conditions.
The CSD18510Q5B from Texas Instruments is a powerful and reliable N-Channel MOSFET, offering superior performance and efficiency for demanding power electronic applications. Its NexFET™ technology, low on-resistance, and high current capability make it an excellent choice for motor control, power supplies, renewable energy systems, and more. With its REACH unaffected status, RoHS3 compliance, and moisture sensitivity level of 1, the CSD18510Q5B is a reliable and environmentally friendly solution for your high-power electronic needs.
Download datasheets and manufacturer documentation for CSD18510Q5B