Texas Instruments
CSD17313Q2T
Single FETs, MOSFETs
CSD17313Q2T
278-CSD17313Q2T
Texas Instruments-CSD17313Q2T-datasheets-4549400.pdf
MOSFET N-CH 30V 5A 6WSON
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CSD17313Q2T Description
The CSD17313Q2T is a high-performance, low-voltage, gate driver with integrated power MOSFETs from Texas Instruments. It is designed to drive external MOSFETs in a variety of applications, including motor control, automotive systems, and industrial control.
Description:
The CSD17313Q2T is a monolithic gate driver IC that integrates two low-side N-channel power MOSFETs and a high-speed gate driver. It is available in a compact 16-pin QFN package, making it suitable for space-constrained applications.
Features:
- Integrated high-speed gate driver: The CSD17313Q2T features a high-speed gate driver that can drive external MOSFETs with fast switching times and low propagation delays.
- Low-side N-channel power MOSFETs: The device includes two low-side N-channel power MOSFETs with low on-resistance and low gate charge, providing efficient switching performance.
- Wide input voltage range: The CSD17313Q2T can operate over a wide input voltage range of 4.75V to 18V, making it suitable for various applications with different supply voltages.
- Advanced protection features: The device offers several protection features, including overcurrent protection, overtemperature protection, and short-circuit protection, ensuring reliable operation and system safety.
- Spread spectrum frequency modulation: The CSD17313Q2T features spread spectrum frequency modulation to reduce electromagnetic interference (EMI) and improve system performance.
- Small package size: The 16-pin QFN package allows for easy integration into compact designs.
Applications:
- Motor control: The CSD17313Q2T is ideal for driving external MOSFETs in brushless DC (BLDC) motor control applications, providing efficient switching and control.
- Automotive systems: The device can be used in automotive systems, such as electric power steering (EPS) and window lift applications, where high performance and reliability are required.
- Industrial control: The CSD17313Q2T is suitable for various industrial control applications, including robotics, conveyor systems, and factory automation equipment.
- Battery management systems: The device can be used in battery management systems to drive MOSFETs for efficient battery charging and protection.
- Power supplies: The CSD17313Q2T can be used in power supply applications, such as switched-mode power supplies (SMPS) and battery chargers, to drive external MOSFETs for efficient power conversion.
In summary, the CSD17313Q2T from Texas Instruments is a versatile, high-performance gate driver IC with integrated power MOSFETs, designed for a wide range of applications, including motor control, automotive systems, and industrial control. Its compact package size, advanced protection features, and wide input voltage range make it an ideal choice for space-constrained and high-reliability applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
Maximum Gate Resistance (Ohm)
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Typical Gate Plateau Voltage (V)
Material
Package Length
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
CSD17313Q2T Documents
Download datasheets and manufacturer documentation for CSD17313Q2T
CSDYYY 01/Feb/2019 CSD17313Q2 TI Solutions Tablets,eBooks Power Management Guide CSD17313Q2 Related Parts
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