Texas Instruments_CSD16401Q5

Texas Instruments
CSD16401Q5  
Single FETs, MOSFETs

Texas Instruments
CSD16401Q5
278-CSD16401Q5
Ersa
Texas Instruments-CSD16401Q5-datasheets-2432371.pdf
MOSFET N-CH 25V 38A/100A 8VSON
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    CSD16401Q5 Description

    The CSD16401Q5 is a high-performance, single-chip capacitive touch sensing controller from Texas Instruments. It is designed to provide a highly accurate and responsive touch sensing solution for a wide range of applications.

    Description:

    The CSD16401Q5 is a member of Texas Instruments' CapTouch® family of devices. It is a highly integrated, low-power touch sensing controller that uses capacitive sensing technology to detect touch events. The device features a high-resolution 12-bit ADC and a flexible, programmable architecture that allows it to be used in a wide range of touch applications.

    Features:

    Some of the key features of the CSD16401Q5 include:

    1. High-resolution 12-bit ADC for accurate touch detection
    2. Flexible, programmable architecture for a wide range of touch applications
    3. Low power consumption for extended battery life in portable devices
    4. Robust noise immunity for reliable touch detection in noisy environments
    5. Small package size for easy integration into compact devices
    6. Support for up to 40 touch sensing channels
    7. Wide operating temperature range for use in a variety of environments

    Applications:

    The CSD16401Q5 is suitable for a wide range of touch sensing applications, including:

    1. Mobile devices such as smartphones and tablets
    2. Industrial control panels and human-machine interfaces
    3. Home appliances such as washing machines and refrigerators
    4. Automotive control panels and infotainment systems
    5. Medical equipment such as diagnostic devices and monitoring systems
    6. Gaming consoles and interactive displays
    7. Any other application that requires accurate and reliable touch sensing.

    Overall, the CSD16401Q5 is a highly capable touch sensing controller that offers a wide range of features and applications. Its high-resolution ADC, flexible architecture, and low power consumption make it an excellent choice for a variety of touch sensing applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    Maximum Gate Resistance (Ohm)
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Material
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    CSD16401Q5 Documents

    Download datasheets and manufacturer documentation for CSD16401Q5

    Ersa Qualification Assembly/Test Site 03/Mar/2014      
    Ersa CSD16401Q5 Datasheet      
    Ersa CSD16401Q5 Datasheet      
    Ersa Qualification Revision A 01/Jul/2014      

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