Texas Instruments
CSD16413Q5A  
Single FETs, MOSFETs

Texas Instruments
CSD16413Q5A
278-CSD16413Q5A
Ersa
Texas Instruments-CSD16413Q5A-datasheets-10708242.pdf
MOSFET N-CH 25V 24A/100A 8VSON
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CSD16413Q5A Description

The CSD16413Q5A is a high-performance, single-chip gate driver from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including automotive, industrial, and renewable energy systems.

Description:

The CSD16413Q5A is a highly integrated gate driver that provides high efficiency and robust performance. It features a high-voltage transient protection, advanced desaturation detection, and spread spectrum frequency modulation to reduce electromagnetic interference (EMI). The device is available in a compact 5x5mm QFN package.

Features:

  1. High-voltage transient protection: The CSD16413Q5A provides robust protection against high-voltage transients, ensuring reliable operation in demanding environments.
  2. Advanced desaturation detection: The device features advanced desaturation detection to prevent damage to the power MOSFETs or IGBTs during short-circuit conditions.
  3. Spread spectrum frequency modulation: The CSD16413Q5A uses spread spectrum frequency modulation to reduce EMI, enabling compliance with stringent EMI standards.
  4. High efficiency: The device is designed for high efficiency, reducing power losses and improving overall system performance.
  5. Compact package: The CSD16413Q5A is available in a compact 5x5mm QFN package, making it suitable for space-constrained applications.

Applications:

The CSD16413Q5A is suitable for a wide range of applications, including:

  1. Automotive: The device can be used in electric and hybrid vehicles for powertrain control, battery management, and charging systems.
  2. Industrial: The CSD16413Q5A can be used in motor control applications, such as robotics, conveyor systems, and factory automation.
  3. Renewable energy: The device is suitable for driving power MOSFETs and IGBTs in solar inverters, wind turbine converters, and energy storage systems.
  4. Power supplies: The CSD16413Q5A can be used in high-efficiency power supply applications, such as telecom power supplies and uninterruptible power supplies (UPS).

In summary, the CSD16413Q5A is a high-performance, single-chip gate driver from Texas Instruments that offers high efficiency, robust protection, and advanced features. It is suitable for a wide range of applications, including automotive, industrial, and renewable energy systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD16413Q5A Documents

Download datasheets and manufacturer documentation for CSD16413Q5A

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Ersa CSD16413Q5A      

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