Texas Instruments

CSD16409Q3  

Single FETs, MOSFETs

CSD16409Q3 Description

The CSD16409Q3 is a high-performance N-Channel MOSFET from Texas Instruments, designed for applications requiring high efficiency and fast switching. With a drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 15A at 25°C and 60A at Tc, this device is suitable for a wide range of power electronics applications. The NexFET™ series offers superior performance with low on-resistance (Rds On) of 8.2mOhm at 17A and 10V, and a low gate charge (Qg) of 5.6nC at 4.5V, enabling fast switching and reduced power dissipation.

CSD16409Q3 Features

• NexFET™ Series: Advanced technology for high efficiency and fast switching
• Low Rds On (8.2mOhm) for reduced power loss
• Low gate charge (5.6nC) for fast switching and reduced power dissipation
• High Vdss (25V) and Id (15A/60A) for wide range of applications
• Surface Mount packaging for compact design and ease of integration
• REACH Unaffected and RoHS3 Compliant for environmental compliance
• Moisture Sensitivity Level (MSL) 1 for unlimited storage time

CSD16409Q3 Applications

The CSD16409Q3 is ideal for a variety of power electronics applications where high efficiency, fast switching, and compact design are required. Some specific use cases include:

1. Motor control: High efficiency and fast switching make it suitable for brushless DC motor control in applications like fans, pumps, and robotics.
2. Power supply: Low Rds On and high Vdss make it suitable for power supply applications like battery chargers, power adapters, and LED drivers.
3. Automotive electronics: The device's high current handling capability and robustness make it suitable for automotive applications like electric power steering, inverter systems, and battery management.
4. Industrial control: Fast switching and low power dissipation make it suitable for industrial control applications like servo drives, inverters, and motor controllers.

Conclusion of CSD16409Q3

The CSD16409Q3 is a versatile and high-performance N-Channel MOSFET from Texas Instruments, offering superior efficiency, fast switching, and compact design. Its unique features and advantages make it an ideal choice for a wide range of power electronics applications, including motor control, power supply, automotive electronics, and industrial control. With its NexFET™ technology, low Rds On, and low gate charge, the CSD16409Q3 delivers exceptional performance and reliability, making it a preferred choice for demanding applications.

CSD16409Q3 Documents

Download datasheets and manufacturer documentation for CSD16409Q3

PCN Assembly/Origin :

Qualification Wire Bond 27/May/2014      

Datasheets :

CSD16409Q3      

HTML Datasheet :

CSD16409Q3      

PCN Design/Specification :

Qualification Revision A 01/Jul/2014