Texas Instruments_CSD13383F4

Texas Instruments
CSD13383F4  
Single FETs, MOSFETs

Texas Instruments
CSD13383F4
278-CSD13383F4
Ersa
Texas Instruments-CSD13383F4-datasheets-8669635.pdf
MOSFET N-CH 12V 2.9A 3PICOSTAR
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CSD13383F4 Description

CSD13383F4 Description

The CSD13383F4 is a high-performance MOSFET (Metal Oxide) from Texas Instruments, designed for a wide range of applications. This N-channel, 12V, 2.9A device offers superior performance and reliability, making it an ideal choice for various electronic systems. With a maximum gate-source voltage of ±10V and a drain-source voltage of 12V, the CSD13383F4 delivers excellent electrical characteristics and robust performance.

CSD13383F4 Features

  • Input Capacitance (Ciss): The CSD13383F4 boasts a maximum input capacitance of 291 pF at 6V, ensuring fast switching and low power consumption.
  • Gate Charge (Qg): With a maximum gate charge of 2.6 nC at 4.5V, this MOSFET offers efficient gate control and reduced switching losses.
  • Rds On (Max): The device features a low on-resistance of 44 mΩ at 500mA and 4.5V, enabling high current flow with minimal power dissipation.
  • Vgs(th) (Max): The CSD13383F4 has a maximum threshold voltage of 1.25V at 250µA, providing consistent and reliable operation.
  • Series: As part of the FemtoFET™ series, this MOSFET offers ultra-low capacitance and leakage, making it ideal for high-speed switching applications.
  • Mounting Type: The CSD13383F4 is available in a surface-mount package,PCB。

CSD13383F4 Applications

The CSD13383F4 is well-suited for a variety of applications, including:

  1. Power Management: Its low on-resistance and high current capability make it ideal for power conversion and distribution in electronic devices.
  2. Motor Control: The device's ability to handle high currents and voltages makes it suitable for motor drive applications, such as in industrial automation and robotics.
  3. Automotive Electronics: The CSD13383F4 can be used in various automotive applications, including infotainment systems, lighting, and power windows.
  4. Consumer Electronics: This MOSFET is also suitable for consumer electronics, such as smartphones, tablets, and laptops, where high performance and reliability are critical.

Conclusion of CSD13383F4

The CSD13383F4 from Texas Instruments is a versatile and high-performance MOSFET that offers exceptional electrical characteristics and reliability. Its low on-resistance, fast switching capabilities, and robust performance make it an ideal choice for a wide range of applications, from power management to motor control. With its unique features and advantages over similar models, the CSD13383F4 is a valuable addition to any electronic design.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Automotive
RoHS
Maximum IDSS (uA)
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Logic level
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Package Length
QGS (typ) (nC)
REACH
Series
Pd - Power Dissipation
Base Product Number

CSD13383F4 Documents

Download datasheets and manufacturer documentation for CSD13383F4

Ersa CSD13383F4      
Ersa Carrier Tape 28/Aug/2018      
Ersa CSD13383F4      
Ersa DSBGA/Usip 14/Sep/2016       CSDx 15/Mar/2022      

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