Texas Instruments
CSD23382F4
Single FETs, MOSFETs
CSD23382F4
278-CSD23382F4
Texas Instruments-CSD23382F4-datasheets-6384333.pdf
MOSFET P-CH 12V 3.5A 3PICOSTAR
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CSD23382F4 Description
The Texas Instruments CSD23382F4 is a high-performance, low-power, fully integrated smart gate driver with integrated MOSFETs. It is designed to drive high-current motor control applications, such as brushless DC (BLDC) motors and permanent magnet synchronous motors (PMSM) in various industrial and automotive applications.
Description:
The CSD23382F4 is a monolithic smart gate driver IC that integrates a high-voltage half-bridge gate driver with two N-channel MOSFETs. It is designed to operate with a wide input voltage range and offers excellent electrical characteristics, such as low on-resistance, low gate charge, and low propagation delay.
Features:
- Integrated high-voltage half-bridge gate driver and two N-channel MOSFETs.
- Wide input voltage range: 6V to 60V.
- High peak current capability: up to 40A per MOSFET.
- Low on-resistance: 3.5mΩ (maximum) for each MOSFET.
- Low gate charge: reduces switching losses and improves efficiency.
- Propagation delay: as low as 18ns (typical) for fast switching.
- Integrated protection features: overcurrent protection, short-circuit protection, and thermal shutdown.
- SpreadCycle blanking: minimizes shoot-through issues during commutation.
- SpreadCycle modulation: enables efficient motor control with reduced electromagnetic interference (EMI).
- Small package size: 4.29mm x 5.38mm PowerTrench QFN package.
Applications:
- Brushless DC (BLDC) motor control in industrial applications.
- Permanent magnet synchronous motor (PMSM) control in industrial and automotive applications.
- Electric power steering (EPS) systems.
- Fuel pumps and water pumps in automotive applications.
- Cooling fan control in automotive applications.
- HVAC blower motor control in automotive applications.
- Industrial pumps, fans, and conveyor systems.
- Robotics and automation systems.
The Texas Instruments CSD23382F4 is a versatile and efficient solution for high-current motor control applications, offering excellent performance, integrated protection features, and a compact package size.
Tech Specifications
Unit Weight
Configuration
Rds(on) at VGS=2.5 V (max) (mΩ)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Logic level
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Development Kit
Package Height
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Length
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
QGS (typ) (nC)
REACH
Series
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number
CSD23382F4 Documents
Download datasheets and manufacturer documentation for CSD23382F4
Assembly/Test Site Transfer 19/Dec/2014 CSD23382F4 Carrier Tape 28/Aug/2018 CSD23382F4 DSBGA/Usip 14/Sep/2016 CSDx 15/Mar/2022 Related Parts
Shopping Guide
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