Texas Instruments_CSD23202W10

Texas Instruments
CSD23202W10  
Single FETs, MOSFETs

Texas Instruments
CSD23202W10
278-CSD23202W10
Ersa
Texas Instruments-CSD23202W10-datasheets-10751899.pdf
MOSFET P-CH 12V 2.2A 4DSBGA
In Stock : 14492

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CSD23202W10 Description

The CSD23202W10 is a high-performance, single-chip capacitive sensing device from Texas Instruments. It is designed to provide accurate and reliable capacitive touch sensing for a wide range of applications.

Description:

The CSD23202W10 is a highly integrated, low-power capacitive sensing solution that can detect up to 16 capacitive touch points simultaneously. It features a small, compact package that is easy to integrate into a wide range of applications.

Features:

  • Up to 16 capacitive touch points
  • Ultra-low power consumption
  • Wide supply voltage range (1.71V to 3.6V)
  • Advanced noise immunity
  • Programmable sensitivity
  • On-chip oscillator
  • I2C and SPI communication interfaces
  • Small package size (WLCSP or QFN)

Applications:

The CSD23202W10 is ideal for a wide range of applications that require capacitive touch sensing, including:

  • Mobile devices (smartphones, tablets)
  • Industrial control panels
  • Home appliances (washing machines, refrigerators)
  • Automotive infotainment systems
  • Medical devices
  • IoT devices

In summary, the CSD23202W10 is a highly versatile and reliable capacitive touch sensing solution that offers excellent performance and low power consumption. Its small package size and wide range of features make it an ideal choice for a wide range of applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD23202W10 Documents

Download datasheets and manufacturer documentation for CSD23202W10

Ersa CSD23202W10      
Ersa CSD23202W10      

Shopping Guide

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