The CSD19503KCS from Texas Instruments is a high-performance N-channel MOSFET designed for power management applications requiring robust efficiency and thermal performance. Part of the NexFET™ series, it features an 80V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, making it suitable for high-current switching. With an ultra-low on-resistance (Rds(on)) of 9.2mΩ at 60A and 10V gate drive, this MOSFET minimizes conduction losses, enhancing system efficiency. Packaged in a TO-220-3 through-hole format, it ensures reliable thermal dissipation, supporting a maximum power dissipation of 188W (Tc).
The CSD19503KCS stands out as a high-efficiency, high-current MOSFET, combining low conduction losses, fast switching, and superior thermal management. Its 80V rating and 100A current capability make it a versatile choice for power electronics, while the NexFET™ technology ensures reliability in demanding environments. Whether used in DC-DC conversion, motor control, or industrial power systems, this MOSFET delivers optimal performance, making it a preferred solution for engineers prioritizing efficiency and durability.
Download datasheets and manufacturer documentation for CSD19503KCS