Texas Instruments_CSD19503KCS

Texas Instruments
CSD19503KCS  
Single FETs, MOSFETs

Texas Instruments
CSD19503KCS
278-CSD19503KCS
Ersa
Texas Instruments-CSD19503KCS-datasheets-8988670.pdf
MOSFET N-CH 80V 100A TO220-3
In Stock : 817

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

CSD19503KCS Description

CSD19503KCS Description

The CSD19503KCS from Texas Instruments is a high-performance N-channel MOSFET designed for power management applications requiring robust efficiency and thermal performance. Part of the NexFET™ series, it features an 80V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, making it suitable for high-current switching. With an ultra-low on-resistance (Rds(on)) of 9.2mΩ at 60A and 10V gate drive, this MOSFET minimizes conduction losses, enhancing system efficiency. Packaged in a TO-220-3 through-hole format, it ensures reliable thermal dissipation, supporting a maximum power dissipation of 188W (Tc).

CSD19503KCS Features

  • Low Rds(on): 9.2mΩ @ 60A, 10V reduces power losses in high-current applications.
  • High Current Handling: 100A continuous drain current (Ta) for demanding power stages.
  • Fast Switching: Optimized gate charge (Qg = 36nC @ 10V) and input capacitance (Ciss = 2730pF @ 40V) ensure efficient high-frequency operation.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance enhances flexibility in drive circuitry.
  • Robust Thermal Performance: TO-220-3 package with high power dissipation capability.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL Not Applicable for industrial durability.

CSD19503KCS Applications

  • DC-DC Converters: Ideal for synchronous buck/boost topologies due to low Rds(on) and high efficiency.
  • Motor Drives: Suitable for H-bridge configurations in industrial and automotive systems.
  • Power Supplies: High-current switching in server, telecom, and computing PSUs.
  • Battery Management: Efficient power distribution in energy storage and EV charging systems.
  • Industrial Automation: Robust performance in high-power switching applications like PLCs and inverters.

Conclusion of CSD19503KCS

The CSD19503KCS stands out as a high-efficiency, high-current MOSFET, combining low conduction losses, fast switching, and superior thermal management. Its 80V rating and 100A current capability make it a versatile choice for power electronics, while the NexFET™ technology ensures reliability in demanding environments. Whether used in DC-DC conversion, motor control, or industrial power systems, this MOSFET delivers optimal performance, making it a preferred solution for engineers prioritizing efficiency and durability.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD19503KCS Documents

Download datasheets and manufacturer documentation for CSD19503KCS

Ersa Site Chg 04/Dec/2015      
Ersa CSD19503KCS      
Ersa CSD19503KCS      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service