Texas Instruments_CSD22205L

Texas Instruments
CSD22205L  
Single FETs, MOSFETs

Texas Instruments
CSD22205L
278-CSD22205L
Ersa
Texas Instruments-CSD22205L-datasheets-7050151.pdf
MOSFET P-CH 8V 7.4A 4PICOSTAR
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CSD22205L Description

CSD22205L Description

The CSD22205L is a high-performance P-Channel MOSFET from Texas Instruments, designed for a wide range of applications in the electronics industry. This NexFET™ series device offers superior performance, reliability, and efficiency, making it an ideal choice for various power management and switching applications. With a maximum drain-source voltage (Vdss) of 8V, continuous drain current (Id) of 7.4A at 25°C, and a low on-resistance (Rds On) of 9.9mOhm at 1A and 4.5V, the CSD22205L delivers outstanding performance in demanding environments.

CSD22205L Features

  • High Input Capacitance (Ciss): The CSD22205L boasts a maximum input capacitance of 1390 pF at 4V, ensuring fast switching speeds and improved high-frequency performance.
  • Low Gate Charge (Qg): With a maximum gate charge of 8.5 nC at 4.5V, this device minimizes power loss and reduces switching times, contributing to higher efficiency in power management applications.
  • Robust Power Dissipation: The CSD22205L can handle a maximum power dissipation of 600mW at ambient temperature, making it suitable for high-power applications.
  • Surface Mount Technology: The device is mounted using surface mount technology, which allows for compact designs and improved thermal management in densely populated PCBs.
  • Compliance with Industry Standards: The CSD22205L is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring compliance with environmental and trade regulations.

CSD22205L Applications

The CSD22205L is ideal for a variety of applications where high performance, reliability, and efficiency are critical. Some specific use cases include:

  1. Power Management: The device's low on-resistance and high current handling capabilities make it suitable for power management systems in consumer electronics, industrial equipment, and automotive applications.
  2. Motor Control: The CSD22205L's ability to handle high voltages and currents makes it an excellent choice for motor control applications, such as brushless DC motors and stepper motors.
  3. Switching Regulators: The device's fast switching speeds and low gate charge make it ideal for switching regulators in power supply designs, improving efficiency and reducing power loss.
  4. Automotive Applications: The CSD22205L's robust performance and compliance with industry standards make it suitable for various automotive applications, such as electric power steering, window lifts, and lighting systems.

Conclusion of CSD22205L

The CSD22205L from Texas Instruments is a versatile and high-performance P-Channel MOSFET that offers exceptional performance in a wide range of applications. Its unique features, such as high input capacitance, low gate charge, and robust power dissipation, make it an ideal choice for power management, motor control, switching regulators, and automotive applications. With its compliance with industry standards and commitment to environmental responsibility, the CSD22205L is a reliable and efficient solution for demanding electronics projects.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD22205L Documents

Download datasheets and manufacturer documentation for CSD22205L

Ersa CSD22205L Datasheet      
Ersa CSD22205L Datasheet      
Ersa CSDx 15/Mar/2022      

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